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374 Threads found on edaboard.com: Inversion
What is the weak inversion,strong inversion regions and velocity saturation region? Especially, I wonder difference between strong inversion and velocity saturation region.
I've been playing with the UMC 65nm PDK for designing low noise OTAs for operation from 100kHz-10MHz, and have found that the noise simulation results change in strange ways depending on what device models I choose. In particular I'm comparing twp low threshold 1.2V pmos types, one regular and one RF version. And the RF version has an optional ther
Hello, What is significance of Scaninversion in STIL file? Thanks,
Hi I have studied about inversion coefficient. I am just wondered how gm/id and inversion coefficient is related? Is there any particular relation which can be used for the hand calculation of a design? thanks
You dont want too steep a filter because that results in group delay and audible phase errors. Better to get a better speaker or choose a gyrator design for a graphic or another so-called parametric EQ. These emulate large L's with impedance inversion to
What you are writing looks more like software than hardware, along with some weird sequencing behavior because of that. Why don't you just do the simple inversion of the bit. module fixer ( input main_data, input clk , input number, output reg fixed_data ); always @
Why can structure (d) be used as a floating capacitor but c not? An why only when it's on strong inversion mode? What property allows a gate mos-capacitor to be used as a floating cap? 119753 The thin-oxide capacitive structures av
how to mesure un*cox for nmos3v in TSMC? You can calculate it from an Ids current measurement in strong inversion and linear region from this equation: I_{ds} = \frac {(\mu_n \cdot \, cox)}{2n} \cdot \, \frac {W}{L} \cdot \, (V_{gs}-V_{th})^2 For the substrate factor
SR=Itail/Cload -> Itail = 20uA GBW=20 MHz -> gm = 2PI GBW Cload = 250uS -> Itail > 16uA (depends to inversion coefficient of your input mosfets)
The problem is a sloppy representation of the compensator phase characteristic in the Intersil paper. It's normalized to 0 degree phase, means the phase inversion of the inverting amplifier is eliminated. But LTspice shows the actual phase of the inverting amplifier which is the correct answer. In case of doubt, review a OP circuit design text b
You already mentioned the rule. A 90 twist should be done over a distance greater than two wavelengths of the frequency in use. If a complete inversion is required, (e.g. inversion of 180) the twist should be done over a four wavelength distance.
That would want some more details on just how far below VTH. In weak inversion, it's still inversion and channel carriers will be source species. In depletion you may still see some state- or trap-hopping / tunneling transport. But I question altogether the validity of saying a FET will be biased by an arbitrary current and an unknown (other than
1)What's difference between accumulation and depletion? 2)Why during weak inversion, the electron current from source to drain is mainly due to diffusion not drift current (Electric field)? 3)Is Fermi level defined as 50% point of find a electron? beblow that in valence band is 1 and above that in conduction band its 0.
That's one of the tricky bits about FDSOI. The body can assume a range of potentials and can be charge pumped, although at DC the B-S diode conduction and D-B leakage currents will sum to "something". Usual MOS equations refer to Vgs, not Vgb although the body potential does have a significant role. Fully depleted seems to be taken to mean mo
As per my understanding simulation tool tries to match the bit width of each variable of RHS with the LHS. So first reg b is converted to 64 bits by appending 32 0's at MSB after that inversion happens. That's why you see 1's at MSBs. PS : If you do the same in VHDL, there you have to define reg b bit width as 64 otherwise you will get the comp
io0pin |= (1<<5); // set bit #5 io0pin &= ~(1<<5) // clear bit #5 | - logical OR & - logical AND ~ - inversion - - - Updated - - - if (io0pin & (1<<4) && io0pin & (1<<7)) // true if 4 & 7 bits set
I think to achieve GHz frequency you will have to reduce the gm/Id value (i.e. --> moderate inversion mode), which means reducing the transistor W/L ratio or increasing the drain current. S. the following (general) GBW (fT) vs. gm/Id plot: 115844
Concentric guardrings are common in ESD related circuitry (pad cells etc.). One useful function is that the built-in depletion region is a "getter" for loose minority carriers in the substrate. The ring can also kill lateral BJTs' base ohmically and deterministically if it is closed / pervasive, fight field oxide inversion / charging and so on.
Hello everyone, I am trying to figure out how to measure the Leakage current in the Pmos Decap. PMOS --> gate to VSS, other three nodes to VDD ( inversion) The problem I am facing right now is that the current in the Pmos is reversed so the tool is rounding off the -ve current value to 0. I am trying to find a method to calculate the leakag
Hello, Here is the weak inversion equation that I know: Ids=2*n*u*Cox*Vthermal?*exp((Vgs-Vth)/(Vthermal*n)) Now, I've got a few questions about this: 1) How does the Vds dependency of Ids play in? On MIT open course, I've found the add-on (1-exp(-Vds/Vthermal)) to be multiplied with the above equation. However, this add-on suggests th


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