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374 Threads found on edaboard.com: Inversion
I think this cannot simply be differentiated, because both effects (and hot-electron effects, additionally) depend on external conditions: Vds, operation region (strong, light or no saturation), and operation mode (strong, moderate or weak inversion) with different dependencies. I'd suggest to study these different ef
Is it possible to use a normal NMOS Transistor as a Capacitor (because *NMOS Varactor (e.g. n-diffusion in n-well) *inversion type MOS varactor aren't normal NMOS Transistor), i.e. between Gate and Source/Drain? Quite anumber of pages show the characteristic of the GateBulk-Capacity vs. Ugs (and illustrate the differences betwee Accumulati
The signals ARE inverted but in most serial links there is a double inversion, once in the MAX232 and again inside the serial port so the signal polarity is restored. RS232 specifications (for historical reasons) state this should be done. The standard PC serial port accepts a voltage of +12V for a logic '0' and -12V for a logic '1' although in
What do you mean with: " The transistor is powered in the threshold regime at 250mV".? The common terms to describe the operation region of a mosfet is either weak inversion (sometimes called sub-threshold) or strong inversion. The region between strong and weak inversion is called moderate inversion. Do you mean that vgs=250mV?
Hi Everyone, I want to know that how a HV and high power positive pulsed can be converted in to negative pulsed. I am asking in reference to Pulsed power modulators for Kylstron or Magnetron operation. I have seen some designs in which AC power is firstly converted to DC and then Specially designed switching network converts it into pulses and t
Consider that the high impedance DR is coupled to low impedance voltage source by impedance inversion of 1/4 wave to understand basics. This conversion from M to E field with high Q resonator is enhanced with the Q of the 1/4 wave resonator coupling.
Hi, guys I have problem with P_DIOD design, as you can see to set this device to strong inversion ( gmoverid near to 10) I choose W/L= 1/12, problem is that this p_diod have large vds=720mV a therefore less voltage left fo DIFF_PAIR which is going to triode and Gain of this OTA is going to hell. 108730 So I can
Use this circuit that works. I agree that the TL072 has a problem (Opamp Phase inversion) when the input signal level gets too high.
A MOSCAP requires a minimum voltage across it to give the maximum capacitance. It gives the maximum capacitance when it is in strong inversion i.e. the Vgs > Vth when the channel is full formed. Check Razavi's "Design of Analog CMOS Integrated Circuits" page 39. Btw, MIMCAPs ca be placed over active devices and therefore might not be as much
In old CMOS processes, where the square law was a good approximation, vdsat should indeed be equal to vgs-vth when the transistor is in strong inversion and channel modulation can be ignored (long L). In your case the transistor is in moderate inversion as vgs is almost equal to vth. Try to make vgs a little higher and then re-check vdsat. In moder
Hi all, What are the challenges in designing a voltage reference in deep submicron CMOS process? To my knowledge, CMOS voltage reference are designed on the basis of vertical/lateral BJTs and MOSFETs in weak inversion, and they are adopted to emulate the behavior of real BJT. But is there any non-ideal factor/characteristic in these two eleme
Hi yannik33 Assuming your bias current source has sufficiently high impedance, the intrinsic gain gm/gds of your input device determines the common source gain. Intrinsic gain grows as you lower your inversion level, which is prop to bias current. Bias current buys you bandwidth not gain. So no surprise there. Similarly Vdssat grows with the inver
Thermal noise for hand calculation is most simply expressed as a drain current noise Idn=4 k T Γ g_ms where g_ms is the source transconductance and Γ a factor smoothly varying from 1/2 in weak inversion to 2/3 in strong inversion. It is valid for all regions of operation. As of flicker that's a much stickier matter since modern models us
Hi :) I am facing an Issue here: Negative leakage power is observed in VDD for Antenna cell when run with inversion PTV. Is this right ? I need to understand why the VDD leakage is negative.
A common method used for voice is spectrum inversion: the signal is shifted in frequency (DSB modulation with a carrier of frequency near the upper end of the voice band) and then filtered. Decription is performed in the same way. For DTMF, frequency translation can work as well: SSB with a low-frequency carrier. Do you need an all-analog solution,
In CE configuration output is collected at collector terminal,charge carriers take some time to travel from input to output terminal(equals 180 phase shift) Please, convince yourself before answering. Explanation for the phase inversion: Increase in signal input voltage (Vbe increase)
Hi all, When operating in saturation, subthreshold, or weak inversion, which MOSFET type has lower flicker noise: enhancement-mode or depletion-mode? Intuitively, the depletion FET should have lower flicker noise because the E-field within the gate oxide pushes carriers away from interfacial traps at the surface. Is there any data or other solid
Anything with a depletion region on either side of it will be voltage dependent. MOS channels swing from accumulation through depletion to inversion. Cgs follows gate voltage directly; Cgd, only when the channel is well lit near the drain (linear region - when it goes constant current the capacitance is sort of stood off from the channel by th
can i use the MOSCAP as the feedback cap? Depends, if you can get along with, or if you can avoid the C/V dependency, s. the following figure: 104537. The cap./area values given are for a 3.3V oxide thickness. If you operate the PMOS in inversion mode (D,S,B+ , G- , normal[/
Hi, I am using TSMC 180nm process for opamp design in CADENCE. I would like to know how can I get the Technology current value in order to get the inversion Coefficient. Can anybody provide the solution..