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374 Threads found on edaboard.com: Inversion
The equations aren't right, you have implemented an inversion (also for the latch feedback) by making the output active low. /BEN8H = ADS * BE1 * /BE0 * BS8 + /ADS * BEN8H /BEN8UL = ADS * BE2 * /BE1 * /BE0 * BS8 + /ADS * BEN8UL /BEN8UH = ADS * BE3 * /BE2 * /BE1 * /BE0 * BS8 + /ADS * BEN8UH
hello ,everyone Now ,I want a moscap with inversion mode. can i apply 5V to 0.35um_3.3V_NMOS gate? if not, why?
Generally flicker noise tends to rise with Vov, see the following snippet. Hence triode region (large Vov, small Vds) will probably exhibit more flicker noise than saturation region. Still, operation in strong inversion mode (with large Vov and large Vds) would probably exhibit even more flicker noise in saturation region. 102937[
Hello, As i read in the Gray Meyer's book, the drain current of MOSFET in weak inversion region is constant with different Vds. But when i simulated the operation of MOS in Cadence, the results show that the drain current is also change with Vds as in the strong inversion. Can anyone explain for me why? Does Cadence neglect the weak (...)
You can't get rid of it, if you need inversion. Now you might flip comparator inputs and lose one inverter stage (presuming no other circuit downside, like loss of drive and actually increasing net delay as a result). More likely your comparator analog section, not some inverter, is the bulk of the lag. That wants more current, lower signal swings
Hi every body, I designed a new CMOS OTA which has high linearity as a voltage-to-current convertor. Also I utilized a technique in which "Iabc" has a direct proportion to "gm", i.e : Iabc=Kgm, where K consists of W/L of input transistors and some other constant parameters. By the way all of the transistors are in saturation region not weak inve
That doesn't seem possible, the inversion seems to affect only the copper color so it becomes white from black with the background always white (unlike an inversion in bmp which makes the background black and the pcb white)
hai all... what do you mean by temperature inversion and how the threshold voltage gets decreased by increasing in the temperature?? tanQ
The Nwell acts sort of like a JFET gate, fighting the P inversion channel. More commonly it's referred to as body effect and considered as a shift in VT, but the JFET concept might be a more agreeable visualization. It's the relation of well to source potential that the remarks refer to. A transistor operated at (say) VB=VS=vdd has the same VTeff
Subthreshold (or weak inversion) actually isn't a region of a MOSFET's output characteristic like off, linear = triode, saturation or breakdown region - which are identified by a Cadence ADE analysis, (together with No.3=subthreshold) - but much more an operation mode, classified by the deg
If by gate capacitance you mean gate-bulk capacitance then the gate capacitance consists of series combination of oxide capacitance and depletion capacitance. We only have gate-bulk capacitance when device is off. In saturation and triode regions this capacitance is neglected because inversion layer shields the bulk.
Ihlblue, the answer is simple. You must create a loop that fulfills Barkhausen`s oscillation condition, which consists of two parts: 1.) Loop phase: The phase at a non-inverting bandpasss at f=fo is zero. Thus there must be no additional phase shift in the loop to be realized (an inverting bandpass requires another inversion). 2.) Loop gain: If th
In analog IC design, I extract some parameters through simulation but not accurate,sometimes 50% error. I feel Gm/Id method may be a better choice. but how to determine IC i should used in design. however I don't know how to relate IC with gain. In EE214 EECS240 , the design focus on GBW and SR .etc. not gain, Can gain be priority? As a newbi
The overlap between the gate and the source and drain region is required to ensure that the inversion layer forms a continuous conducting path between the source and drain region. Typically this overlap is made as small as possible in order to minimize its parasitic capacitance. Gate-to-Source/ Drain overlap assures good electro
It's a simple oscillator using the transformer to provide phase inversion. As C1 charges it changes the bias condition of the transistor and hence the oscillator frequency. It might be a door bell chime or a sound effect generator. Brian.
It is very difficult to control the transistor in sub-threshold/weak inversion since the current equation is exponential and varies wildly and everything else varies too. What topology are you trying to implement?
I want to ask, are there any other cases than that: Output stability: 1) |S11|<1 2) |S11|>1 Input stability: 1) |S22|<1 2) |S22|<1, but Rin>|Cin| 3) |S22|>1 does this inversion rule "but Rin>|Cin| [stable inside circl
I also never came across automatic clock inference. Either there's an operation with the clock (gating, inversion) or it has to do with routing restrictions of a specific FPGA family.
any one have any algorithm for inversion of nxn matrix ? Thanks
yingdea, I can see many issues with your design that make the output sensitive to input level. The LM358 has no operation within 1.5 to 2V near each supply rail and your design, Vee=ground. Thus any signal less than 2V above ground is distorted (in your case dead band with inversion). Fix. Use a split supply, virtual mid V+ reference or a "rail