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374 Threads found on edaboard.com: Inversion
Greetings 90508 I have had this question about MOSFET's for a very very long time so would like to share it. I am trying to understand how mosfets work for some application. based on the image attached. one knows that the MOSFET works only because of the inversion layer that has the charge carriers. If the
basically its like strong inversion (SI). in SI you would have saturation if VDS>VGS-VT and triode if VDSinversion VGS almost 100mV and triode if VDS< 100mV. this is not exactly accurate but it gives you an idea of the whole thing. look
The carrier frequency of the PWM in a class-D amplifier has only one frequency. PWM changes its duty-cycle not its frequency. Then the signal inversion can be done with a 180 degree phase shift which produces a delay.
Depends on the process used, and its simulation models. In any case use L ? Lmin (to get rid of CLM limitations), and see that you operate the transistor(s) at least in moderate, better in strong inversion mode if you use low level sim. models.
... and qb i have connected to vdd. It is not allowed to connect an output to a fixed voltage. Often, the other output q is generated by inversion of qb. Unused outputs have to be left open!
Hello John, Score: --> 2 triode - 1 saturation (counting the senior guy) JGK Didn't you ask him for his reasoning? I increase your triode score: always used triode region in such case. Of course you can still reduce the mismatch if you use even larger FETs (= going to lower inversion coefficients) - b
I?m a beginner designing a 10 seconds ON timer like circuit to drive the Motor of Bathroom Spray (I?m testing with LED as of now). I found some delay on circuit and added 1 more TR to have inversion (see the attached pic). 87475 I played with the R1, R2 & Caps to get 10 seconds ON after a long struggle. But, when
Dear friends I have used the MOS as a capacitor. I am running it under the saturation strong inversion region. I have attached you this picture from Jakob Baker book. He told that in order to use the MOS a capacitor it must work in the strong inversion because it has less or no voltage dependency as shown in the graph. However, the grph al
It should be an NMOS source follower, I would have thought. As a PMOS you have introduced and inversion and so have positive feedback. Keith
Regarding (4). I think that you need to have a sufficient margin from Vgs to Vth (my guess is 100m-150mV) otherwise they are going to move from weak inversion. If you use spectre you can see the region of operation. Check that the region=3 for weak inversion. Also the mos (not the one above the resistor) usually has higher Vgs than the other one, s
Hello, So I've read that the body effect increases VT by virtue of VSB > 0. This pulls more -ive ions into the channel. This increases the amt of gate charge needed to mirror these -ive ions prior to an inversion layer forming. This increase in the amt of gate charge translates to an increase in VT. However, what about the dependance of VT
That's also how I'd do it (given the gun to the head). A set of FFs clocked on posedge, other set on negedge, and then xor the outputs. On an fpga with local clock inversion you would only need one clock net. As ads_ee pointed out, that does require some constraints on placement to make sure this thing meets timing. But by RLOCing the FFs (ie RL
Assuming you mean physical switches, you can make some logic with them. Two switches in series are AND logic and in parallel are OR logic. If you add a relay you can do more as you can do inversion as well. A lot of machine control used to be done with switches and relays. Keith
In common emitter circuits an increase in Base voltage causes a decrease in Vout and a decrease in Base voltage produces an increase in Vout. I`ve got the impression that Andrew would like to know WHY there is a phase inversion. The answer is simple: An input voltage increase causes an increase in th
? if some one can throw some light on the issue of negative feedback on the positive terminal of the would be helpful The lower transistor (original drawing!) - together with the resistor - operates in common emitter configuration. Thus, there is a phase inversion between its base (opamp output) and the ba
Hi, I have a project on writing a n*n matrix inversion by using verilog code. I hope can doing this by using QR decomposition. Can anyone give me some clue on: 1) how can making the code is suitable for n*n matrix by just changing the parameter ? 2) a module that can do floating point division.
Hello all Kindly, I eould like to ask how the transister working int the subthreshold region (weak inversion) has a high transconductance (gm) and hence high gain but small GBW. if we have high gm then we must have GBW as (GBW = gm/Cc). thank you
... Bascially "SELECT" is a jumper that either close or open to do the selection. If you just need an inversion between SELECT and Vout, use an inverter. If you want to switch different input voltages, use a 4066 type multiplexer (4 such switches in one package). Both methods get along with a single power sup
What do you mean with phase change. Phase inversion?
can u please tell me the suitable parameters of the NMOS & PMOS devices for strong inversion region for ?5V power supply ??? I'll be thankful to you all... I am facing problem in my project... THANX ....PARASHURAM