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How to set the parameters for strong inversion region in PSPICE simulation?
For such high frequency in any case use min. L=0.18?m. If you need a current of 16mA you'll need a W/L ≧ 100 , so you'll operate the MOSFETs in heavy strong inversion mode. Try this for a start!
in mentergraphic Eldo simulator there is an option where it can show you the status of the each MOS transistor in the circuit whether if work in strong or weak inversion or triode. Don't mix up operation modes (strong/moderate/weak inversion) and operation ranges (triode/saturation)! [QUOTE=senan;114
how could i know if my op-amp is working in the strong inversion or in the weak inversion??, i read from many resources that i have to check the overdrive voltage if it is below 50 mV then it is working in the weak inversion. is it right?? or if you have any suggestions then i am looking forward for it See this ima
... So I suspect there are some drawbacks comparing with standard-Vth MOSFET. could you give me a sense? Low-Vth MOSFETs in "off" mode actually are still in weak inversion aka subthreshold mode, which means they have substantial leakage currents, considerably higher than standard-Vth MOSFETs. So in or
Hi all , I thought the only differences between a Mutex and a semaphore are the count(Semaphore Capability) and priority inversion(Mutex Capability) . Today , I?ve encountered something strange which maybe is related to the priority inversion capability or something else . Getting and releasing Mutex or Semaphores between different tasks is c
Hi i have a doubt in designing differential amplifier, generally we will be designing the W/L ratio of diff amplifier in large, what is the reason behind this.... what happens if we increase the length in pmos diff amplifier? Operating at large W/L pushes the diff pair towards weaker inversion which is the OP region of
New methods, other than using longer than minimum channel length, and strong inversion operation mode?
77088 vdsat is very large ,will this cause any problem? For what? For the VCO lock-in? Depends. M6 & M7 both work in strong inversion mode, so large vdsat is normal. M6 correctly works in saturation region, M7 in triode region however, which lowers the loop gain and inserts an additional(
Hi i know setup (worst),P=SLOW,V=LESS,T=HIGH.....hold(best) P=FAST,V=HIGH,T=LESS.if i am checking worst corner means i can say setup what is meant by COLD and HOT corners. Can one explain??? can i say like this COLD corner means T=LESS so hold it correct r opposite means(COLD=setup check) because of some temp inversion(comes
Hi, I am designing a low power current starved ring oscillator as shown in attachment. The bias current for each inverters is in the range of 50n to 100nA. M1 M4 are in strong inversion saturation and act as current sources. i have made w/l very small like 1/40 to put them in strong inversion. How do i size M2 M3? If i size for general invert
... but if i but a usb to db9 connector than do i need max232 pin on my circuit? i dont know but i believe that their is already max232 ic in that connector??? Even if there is a MAX232 inside the DB9 connector, you still need an inverter, and MAX232 provides both: level conversion and signal inversion. Otherwise
To the simulator, as long as vdsat=Vgs-Vth<0, they will flag the MOS as operating in region 3, and defines it as the sub-threshold region. It's stupid. In reality, the region of vdsat<0 actually comprises of the week inversion region (sub-threshold), and part of the moderate inversion region. In the weak inversion region, the I-V is (...)
Hello Dears I need to know that how can i calculate the inverse of a covariance matrix in vhdl? ( a 2*2 matrix) also, please tell me that how can i insert the inversion steps in an ASM? (In fact, i have a single Gaussian function and i want to prepare an ASM for it , then try to write its codes) Regards Mostafa
I think your question isn't quite clear, may be you mix up subthreshold and saturation resp. linear region? Subthreshold (or moderate resp. weak inversion) is an operation mode, meaning in which range of Veff = VGS - Vth the FET is operated, whereas the linear or saturation region designate in which part of the ID vs. VDS characteristi
Please give some materials or method for finding noise spectral density for bulk driven MOS circuits operating in moderate inversion region???? Thanks in advance
Hi all , It?s my first experience with RTOS , I?m completely familiar with RTOS (Tasks , priorities , semaphor , mutex , priority inversion , message boxs , Interrupt handling ?) but as far as I haven?t actually had any experience with that I need your help . I don?t want to make another mistake like I?ve made so far in non OS programming strate
I read in article that "At short channel lengths the halo doping of the source overlaps that of the drain, increasing the average channel doping concentration, and thus increasing the threshold voltage. This increased threshold voltage requires a larger gate voltage for channel inversion. However, as channel length is increased, the halo do
I read that in an n-mosfet, when drain voltage is increased above threshold (in saturation mode) the inversion channel between the source and drain is pinched-off near the drain region. so the channel length decreases and so its resistance. so larger current flows through the channel. My doubt is, when a smaller portion is pinched off near the dr
Hello guys. i am designing a OTA in weak inversion... and the voltage gain looks good but the gm behavior shows very low values at low frequencies it this normal? I calcuate that from the ratio of the output current over the voltage input. It this correct? 73483 its only for gathering the idea for weak inversion