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374 Threads found on edaboard.com: Inversion
WCCOML is a max leakage power corner. It must be used for estimating leakage power of your design. Regarding temp inversion - it depends on the design - sometime you can observe it, sometime - no. So, to check timing - will be better to use both of these libs, to check leakage power - use WCCOML
AC to DC (rectification) DC to AC ( )? can it be called inversion because we use inverters for this.
how can i compute P(x<0) using characteristic function of x? characteristic function of x doesnt have a analitical inversion to compute P(x).
Hi, The below tutorial shows a simulation of Accumulation mode MOS varactor on Page 6 They have disconnected S and D of a MOS and Gate and Body are being supplied. NOw I have read in many IEEE papers that for inversion mode for a PMOS you need to connect the Body at mos
I don't see, that the problem calls for an absolute value amplifier. Pulse inversion will be achieved by a basic inverting amplifier. Pulse stretching respectively peak hold is a different topic. It's a standard function in classical nuclear electronics and you'll find a lot of related literature. Available ADC speeds have considerably increased ov
I am afraid I do not understand your problem. The sign of both inputs of an opamp are designated with respect to the output (number of signal inversions). Thats all. The output "alone" has no sign at all. And your last question? What is the problem?
David M. Binkley "Tradeoffs and Optimization in Analog CMOS Design" on pp. 153..163 gives a comprehensive overview on 0.18?m CMOS process Early Voltage (VA) dependency on transistor length (L), inversion Coefficient (IC), and Drain-Source-Voltage (VDS). A rather coarse approximation for this p
The threshold voltage of a MOSFET is usually defined as the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. The purpose of the inversion layer's forming is to allow the flow of electrons through the gate-source junction. In other words it is the gate sourc
In weak inversion the current varies exponentially with gate-to-source bias VGS as given approximately by 58417. where ID0 = drain current at VGS = Vth, the thermal voltage VT = kT / q and the slope factor n is given by n = 1 + CD / Cox, with CD = capacitance of the depletion layer and COX = capacitance of the oxide layer.
If you are using some external buffers, as for example the ULN2003-2004 series and the PNP transistors, you need to change the program in order to revers the logic levels data on the output ports or to connect another inverter gates, so that the outputs remain unchanged (the two inversion functions would "cancel" each other out so that there
hi What is MOSCAP? Please explain me accumulation depletion and inversion mode. Any practical use of MOSCAP?
If we keep one input of XOR gate LOW than 2nd input will appears in output.(Buffer) If we keep one input of XOR gate HIGH output will be inversion of second input.(Inverter) So XOR gate provide controllability that one DFT's main requirement. Also XOR gate can do comparison operation: If both inputs are same it's output is 0. If both are di
it means that you are very far from the sign inversion of the feedback, so it is ok.
Can anyone explain briefly about Temperature inversion?
Hi, I want to design an OTA in subthreshod region. But i don,t know how must start my design. OTA have 1v Vdd. gain=52db and I(vdd)<100nA Please help me as soon as possible. Thanks
Hi, I'm working on Active Noise Control for speaker. I try to developed the speaker that can reduce the unwanted noise using phase inversion concept. I found that there're some delay from the circuit. So, I want some kind of digital delay that can delay for 1 period of sound. Can everybody tell me how to use a digital delay?
hello, I have found this Single Mode inversion Voice Scrambler/Descrambler If someone uses it in combination with a transceiver to scramble audio, will the receivers be able to descramble audio without having a descrambler, by just switching to LSB mode?
Hi guys, My method is : 1.let gm of weak inversion equal to that of strong inversion which is: gm=ID/(nUT)=2*ID/Vdsat; 2.therefore, we have: Vdsat=2nUT; 3.ID=0.5*K*(W/L)*(2nUT)^2 For example, if we want 100nA current flow through MOSFET which is working in the W.I region, (since n=1.2~1.5, let n=1.2), we have: 100nA*KOV=0.5*110uA/V*(W/L)*
Not totally positive from my side, sorry! With a W/L=1 and a (somehow) injected op. current of 50pA you could work in very very deep weak inversion (IC≈1e-4) with a gm/Id of about 30/V . This achieves a gm≈1.5 nA/V , and with an estimated load capacitance of Cl=10fF a UGB≈24kHz. A bit far from the required 100GHz. :-(
Hi, Can anyone explain abt the relation b/w temp & current density which plays a role in Electromigration in detail. My undertanding is that, when Temp increases - delay increases (Ignore Temperature inversion concept), so the resistance will be more as delay increase, hence the flow of current will be slow. I accept