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374 Threads found on edaboard.com: Inversion
Q1: Is DC gain "Av0 = Gm/Gds" always true for weak, median, and strong inversion range? Q2: Is DC gain "Av0 = Gm/Gds" always true for triode(linear), and saturation range?
Hi, I run a simple DC simulation for a single NMOS to get Id-Vds curves, then plot the derivative of the Id-Vds curve to get slope value, it is equal to gds value in simulation output file at strong inversion range; However at weak inversion range or median inversion range, the slope value is 50% or more lower than gds. Anybody know why?
All, I am synthesizing a basic design with three clock domains and the occasional negedge flop. To make reordering not an issue for negedge flops, I invert the clock with scan_mode. The scan_mode signal is generated from a flop within the design. The tool reports Warning: A non-unate path in clock network for clock 'wdt_clk' from
Hi Kicha, Go through the below link. Alpesh Kothari: Temperature inversion. Is this a new 45nm effect? Regards
Depending on whether the MOSFET is NMOS or PMOS. NMOS is used for pull down network. PMOS is used for pull up network. So, gate is from 7407, Power to Drain and fan to Source, the other terminal from fan will be connected to Ground. Gate = The control of inversion layer. This inversion layer means the electrons/ holes generated that allows the v
Carrier mobility reduction essentially occurs in strong inversion due to velocity saturation effects, i.e. in short channel devices, so depends much more on the length (L) than on W. See e.g. D. Binkley "Tradeoffs and Optimization in Analog CMOS Design", Chap. 2.4.3. Here's a clipping from the text (p. 16) : "A primary effec
For high speed / RF, you want many narrow fingers to hold down Rg. For analog you want wider, as much mismatch (esp at weak inversion) can come from the channel edge (bird's beak) or strain effects (STI). Your foundry may or may not break down mismatch into area, w, l dependencies (often only area is discussed; whether this is because the others d
At weak inversion and small geometry the channel charge can be single carrier or few carriers. Random dopant density variation becomes a problem. I believe this question wants data, not generalizations. Other than the usual "more area is better", which is true but not entirely useful because you really want to know the point of diminishing
Due to several physical effects (VS = velocity saturation, VFMR = vertical field mobility reduction, CLM = channel length modulation, DIBL = drain induced barrier lowering) these effects exert varying impacts on the transistor characteristics. The first 3 mentioned effects are important mostly in strong inversion operation (VS acting mainly on shor
First, you don't mention what your technology is. Generally, in weak inversion currents are small and hence you can expect higher values for ro, respectively lower values for gds. The formula that you gave gds=Id/Vds is not correct if Id and Vds are your dc values. The question you asked: "Do MOSFETs in the weak inversion region act different
Vt -0.85 IDS(at)VGS 155(at)12 1. What all information can we gather from this note? It's a HV pMOSFET (neg. Vt), operated in deep strong inversion (VGS=12V) With such few info, we can only speculate: Let's assume the given data is for a unit W/L ratio, i.e. W=1?m/L=1?m.
Hi fgorvoctory, which order and corner frequency do you require? An extraordinary low power consumption can be achieved with filters in the log domain (weak inversion operation).
Regarding mutex vs binary smaphore. A mutex is like a binary semaphore with the following differences: 1. A mutex has an owner 2. A mutex solves priority inversion using priority inheritance or priority cieling protocol 3. A mutex can be locked recursively 4. A mutex is used in mutual exclusion while a binary semaphore can be used for signalin
Perhaps TANSAH wants to see an integral explicitely in the formula. Therefore, read this explanation for an intergator circuit (without signal inversion): * Voltage across a capacitor: Vc=(1/C)∫idt with i=Vin/R (due to virtual ground at the inverting opamp terminal) * Thus, Vc=(1/RC)∫(Vin)dt. * For Vin=const. this leads to Vc=(1
Hi all, I design a matlab design tool for two-stage amplifier by using inversion coefficient. It can be used as a helpful tool to design a two-stage amplifier. It is available in the following website. I will get Ph.d this semester, and look for a position as an analog integrated circuit designer.
Hello All, I have to simple doubts: 1) creation of inversion layer: above particular Vgs holes are rejpelled away from gate jujnction and immobile Negative ions are formed.. and when Vgs is increased further, inversion layer is formed.. ( electrons ) where these electrons comes from??? 2) Bias effect : If substrate
What is the physical meaning of the above statement? What's the difference between gm/Id methodology and using inversion Coefficient? I think, the explanation is given in Binkley's paragraph below your citation: 3.4.2.2 Fixed–normalized inversion coefficient Actually, I think there is no difference
my take: ignore the inversion, initial bit stream could have been anything. The multiply by x^8 is to "make space" (7 bits) for the CRC bits, so that the whole poly becomes a multiple of the CRC poly after the CRC bits are appended. That would have been the case if there was no x^7. Since the CRC poly has degree 8, the x^7 will remain after divis
A mutex is a binary semaphore that prevents priority inversion. So it should do what you want. It is main function is mutual exclusion and task synchronization. Which RTOS do you use? Can you share your code. -- Amr Ali
The question seems almost unclear because the code hasn't anything to do with "read in" a value, neither positive nor negative. If output inversion would be possibly needed in PWM generation, depends on the intended power stage configuration and PWM scheme, that hasn't been mentioned.


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