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5 Threads found on edaboard.com: Inversion Factor

Design of Voltage Reference in Deep Submicron CMOS Process

Hi all, What are the challenges in designing a voltage reference in deep submicron CMOS process? To my knowledge, CMOS voltage reference are designed on the basis of vertical/lateral BJTs and MOSFETs in weak inversion, and they are adopted to emulate the behavior of real BJT. But is there any non-ideal factor/characteristic in these two eleme

Flicker and Thermal Noise Coefficient

Thermal noise for hand calculation is most simply expressed as a drain current noise Idn=4 k T Γ g_ms where g_ms is the source transconductance and Γ a factor smoothly varying from 1/2 in weak inversion to 2/3 in strong inversion. It is valid for all regions of operation. As of flicker that's a much stickier matter since modern (...)

technology current for inversion coefficent

Hi, I am using TSMC 180nm process for opamp design in CADENCE. I would like to know how can I get the Technology current value in order to get the inversion Coefficient. Can anybody provide the solution..

What happens to current flow in mosfet when temperature decreases?

It is there in the explanation of the model : In weak inversion: Id=Im * exp( (Vgs-Vm)/n*φt)*[(1-exp(-Vds/φt), where Im=(W/L)*I'm φt=(k*T)/q In saturation: Id=(k/2)*(Vgs-Vt)? Vt=Vto+γ(√Vsb+φo -√φo) so doing the math we find out that the dependance from the factor of the temperature is a bit comple

Calculating n slope factor to technology current

Hi all, is this method is valid for calculating n from week to strong inversion? or is there any alternate i need to calculate n(slope factor) to find technology current. Thanks