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18 Threads found on edaboard.com: Inversion Level
I've been playing with the UMC 65nm PDK for designing low noise OTAs for operation from 100kHz-10MHz, and have found that the noise simulation results change in strange ways depending on what device models I choose. In particular I'm comparing twp low threshold 1.2V pmos types, one regular and one RF version. And the RF version has an optional ther
1)What's difference between accumulation and depletion? 2)Why during weak inversion, the electron current from source to drain is mainly due to diffusion not drift current (Electric field)? 3)Is Fermi level defined as 50% point of find a electron? beblow that in valence band is 1 and above that in conduction band its 0.
Use this circuit that works. I agree that the TL072 has a problem (Opamp Phase inversion) when the input signal level gets too high.
Hi yannik33 Assuming your bias current source has sufficiently high impedance, the intrinsic gain gm/gds of your input device determines the common source gain. Intrinsic gain grows as you lower your inversion level, which is prop to bias current. Bias current buys you bandwidth not gain. So no surprise there. Similarly Vdssat grows with the inver
yingdea, I can see many issues with your design that make the output sensitive to input level. The LM358 has no operation within 1.5 to 2V near each supply rail and your design, Vee=ground. Thus any signal less than 2V above ground is distorted (in your case dead band with inversion). Fix. Use a split supply, virtual mid V+ reference or a "rail
Depends on the process used, and its simulation models. In any case use L ? Lmin (to get rid of CLM limitations), and see that you operate the transistor(s) at least in moderate, better in strong inversion mode if you use low level sim. models.
... but if i but a usb to db9 connector than do i need max232 pin on my circuit? i dont know but i believe that their is already max232 ic in that connector??? Even if there is a MAX232 inside the DB9 connector, you still need an inverter, and MAX232 provides both: level conversion and signal inversion. Otherwise
So you want to level-shift the input with an inverting summing stage, and then differentiate for a net non-inversion, I expect.
Hi youyang, 1) If talk about output resistance, it can be expressed as Rds=Va/Ids, where Va=Coeff*L. In this connection Rds is independent from inversion level. 2) Because Ids is more sensitive to Vgs the current mirror based on devices operating at weak inversion (sub-threshold) suffers from increased mismatch and noise comparing with (...)
In a band when fermi level crosses the intrinsic level due to application of voltage (bending) inversion takes place. A p type channel device has the fermi level below the intrinsic level. Due to application of gate voltage the band bends upward and eventually crosses the intrinsic level. (...)
Hi, I'm looking for some info (papers etc.) on the amplitude-phase crosstalk that is inherent in log pixels. The way I understand it is that an increased/decreased amplitude of photocurrent changes the level of weak inversion in the load changing it's effective resistance and thus the ac response of the circuit including the phase shift. Ni
The top level or Inverter level? Vdd+Vdc+Gnd When I place it on top level i cant check the performance of individual inverter! The inverter does not show inversion and shows a weak signal of mV whereas the input is in Volts. When I place it on inverter level I get an error by cadence Please clarify
Hi, all Does anyone know how to do the simulaiton on the inversion coefficient by using Hspice? inversion coefficient is the level of inversion. For more details, please go to Thanks
plz solvw this problem and give its solution Given that the life time of the upper level of the λ=632.8 nm transition in He-Ne laser is 1*10^-7 sec,calculate the degree of population inversion required to give a gain coefficient of 0.07 /m ignoring line-broadening effect. ans=4.39*10^5 /m?
The level shift is needed to keep the core devices (i.e., M6 and M3 or M7 and M2) properly biased. Infact, for a given bias current you need to guarantee a DVgs+Vth each for strong inversion condition. Note that M1 and M4 act as a source follower here (almost ideal) such that, from a small signal standpoint, you have same vi+/- at the input of t
Hi, Would you please tell me how to write the following questions' code in VHDL if you know and understand RC6 Encryption Algorithm / round level inversion?I will appreciate your help.Thank you. Q1. ?Input ?128-bit plain text ? stored in four 32-bit registers A,B,C,D ?round keys S,S,S
Hi, Does anybody know how to write the VHDL code of RC6 / Round level inversion for the fault tolerant Crypto hardware?Or you know where I can download the similiar code and modify it?Or would you please give me your VHDL code's idea for this?I will appreciate your help. Thank you.
Hi, I have a question.Would you please tell me where I can find out the VHDL Examples of RC6 / round level inversion for Implementation of fault tolerant Crypto hardware: Design, Modeling, simulation synthesis and analysis in the EDA & Electronics Related E-Book links of this website ? Would you please tell m