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75 Threads found on Inversion Region
... Vgs controls everything whether something in saturation, triode or weak inversion but the block diagram doesn't show Vgs how it could make the device in weak inversion region as opposed to other mode like saturation or triode. The other way round: weak inversion (or subthreshold) i
How to find the strong inversion region of a mosfet? In th book, I find, wenn gm/Id is smaller than 10S/A, is it in strong inversion region. Is it always the same for different process? Yes. In this case the inversion Coefficient IC ≥ 10 ; that' the definition for strong (...)
How do you ensure that your operating point stays where you want it? That's the first trick. As VT slides around with temperature, are you then requiring that the circuit (centered at some subthreshold point) really work from cutoff to strong inversion when you throw PVT into the mix? Second is to be really sure that your subthreshold region is l
Razavi book says: When inversion layer is being formed in a MOSFET, as the Vg becomes more positive, the holes will be repelled from the gate area leaving the negative ions behind and it forms a depletion region. When the negative ions are present in that region, why is it called depletion region ? If the negative ions are (...)
What is the weak inversion,strong inversion regions and velocity saturation region? Especially, I wonder difference between strong inversion and velocity saturation region.
how to mesure un*cox for nmos3v in TSMC? You can calculate it from an Ids current measurement in strong inversion and linear region from this equation: I_{ds} = \frac {(\mu_n \cdot \, cox)}{2n} \cdot \, \frac {W}{L} \cdot \, (V_{gs}-V_{th})^2 For the substrate factor
Electrons in the inversion layer are always provided by source or drain n+ heavily doped regions - irrespective of whether this is bulk device, fully- or partially-depleted SOI - assuming there is n+ region in proximity with the gate. (without n+ regions, electrons are provided through thermal generation in the depletion (...)
Concentric guardrings are common in ESD related circuitry (pad cells etc.). One useful function is that the built-in depletion region is a "getter" for loose minority carriers in the substrate. The ring can also kill lateral BJTs' base ohmically and deterministically if it is closed / pervasive, fight field oxide inversion / charging and so on.
I think this cannot simply be differentiated, because both effects (and hot-electron effects, additionally) depend on external conditions: Vds, operation region (strong, light or no saturation), and operation mode (strong, moderate or weak inversion) with different dependencies. I'd suggest to study these different ef
What do you mean with: " The transistor is powered in the threshold regime at 250mV".? The common terms to describe the operation region of a mosfet is either weak inversion (sometimes called sub-threshold) or strong inversion. The region between strong and weak inversion is called moderate (...)
Anything with a depletion region on either side of it will be voltage dependent. MOS channels swing from accumulation through depletion to inversion. Cgs follows gate voltage directly; Cgd, only when the channel is well lit near the drain (linear region - when it goes constant current the capacitance is sort of stood off from the (...)
Generally flicker noise tends to rise with Vov, see the following snippet. Hence triode region (large Vov, small Vds) will probably exhibit more flicker noise than saturation region. Still, operation in strong inversion mode (with large Vov and large Vds) would probably exhibit even more flicker noise in saturation region. (...)
Hello, As i read in the Gray Meyer's book, the drain current of MOSFET in weak inversion region is constant with different Vds. But when i simulated the operation of MOS in Cadence, the results show that the drain current is also change with Vds as in the strong inversion. Can anyone explain for me why? Does Cadence neglect the weak (...)
Subthreshold (or weak inversion) actually isn't a region of a MOSFET's output characteristic like off, linear = triode, saturation or breakdown region - which are identified by a Cadence ADE analysis, (together with No.3=subthreshold) - but much more an operation mode, classified by the deg
The overlap between the gate and the source and drain region is required to ensure that the inversion layer forms a continuous conducting path between the source and drain region. Typically this overlap is made as small as possible in order to minimize its parasitic capacitance. Gate-to-Source/ Drain overlap assures good electro
Hello John, Score: --> 2 triode - 1 saturation (counting the senior guy) JGK Didn't you ask him for his reasoning? I increase your triode score: always used triode region in such case. Of course you can still reduce the mismatch if you use even larger FETs (= going to lower inversion coefficients) - b
Hi All, I referred to some paper and used the circuit in the following to design a PTAT. M1 and M2 are in weak inversion over all temperature, and current source are good. However, I have some questions of this simulated PTAT and hope any of you can advise. 86760 Question: (1) You can see that this PTAT is not ideally str
how the transister working int the subthreshold region (weak inversion) has a high transconductance (gm) and hence high gain but small GBW. Transistor working in the subthreshold region (weak inversion) has a low transconductance (gm)! gm/Id is high.
can u please tell me the suitable parameters of the NMOS & PMOS devices for strong inversion region for ?5V power supply ??? I'll be thankful to you all... I am facing problem in my project... THANX ....PARASHURAM
How to set the parameters for strong inversion region in PSPICE simulation?