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374 Threads found on Inversion
I have this oscillator design and it says it operating at weak inversion region. How do you do that? I thought Vgs controls everything whether something in saturation, triode or weak inversion but the block diagram doesn't show Vgs how it could make the device in weak inversion region as opposed to other mode like saturation or
Hello, Does VHDL 2008 have special syntax to invert a bus of data like this? invert_bus: for index in data_in ' range generate data_out ( index ) <= not data_in ( index ) ; end generate ;
In my page I have described a regenerative receiver that can under some circumstances receive USB (not LSB). I need an audio circuit that can do audio spectrum inversion for 200Hz or so to 3KHz or so. This means, the higher audio frequencies must appear lower and the lower, higher. Is is similar to the
As dick_freebird wrote, electrons in the inversion layer of a NMOS transistor are coming from source (and drain - depending on applied voltages) - if there are n+ source/drain regions abutting the gate. In NMOS capacitor without n+ regions nearby, what happens when gate is biased positively is this - at first, holes are pulled away from the gate,
Hi guys, Allow me to ask you a question, since you are talking about Vdssat. In cadence, when you do annotate you get some of the mosfets parameters like vdsat, vds, vgs, vth, vbs, etc. Now, when you are designing a circuit we know that, depending if you are designing for strong inversion, moderate inversion or weak inversion, how do you (...)
Are you really operating the current mirror with transistors in inversion or is it a drawing fault? - - - Updated - - - Apparently not, otherwise the current mirror won't have current gain near 1. - - - Updated - - - The unexpected point is that you can apply 5V Vce b
I want to design a filter for ECG detection system. Is it necessary to use Weak inversion or Bulk driven mosfets/OTA. Can any one help me in providing information about this?
How to find the strong inversion region of a mosfet? In th book, I find, wenn gm/Id is smaller than 10S/A, is it in strong inversion region. Is it always the same for different process? Yes. In this case the inversion Coefficient IC ≥ 10 ; that' the definition for strong inversion.
... gm/Id methodology used to bias transistors in strong inversion It is correct to use bias transistors in strong inversion, but for strong inversion operation the gm/Id methodology isn't the correct design method: the gm/Id methodology is used for moderate or weak inversion operation. Use standard, i.e. [B
Hi, I am using Advanced Sentaurus TCAD. I want to check volume inversion occuring in a DGFET. What models should I include in physics section of des.cmd file? or what changes I have to make in parameter file? Can anyone help me?
Hi, I am using Advanced Sentaurus TCAD. I want to check volume inversion occuring in a DGFET. What models should I include in physics section of des.cmd file? or what changes I have to make in parameter file? Can anyone help me?
According to Binkley (s. below), regarding to the very low vdsat=38mV info (above), it could well be in weak inversion mode. Actually, vdsat shouldn't be lower than 4Vt≈100mV (at room temperature). 129547 What't the disadvantage of Vds< 100mV?
Hello, I am using 0,13um cmos technology from IBM, BSIM4.4 model. Simulating a NMOS with Vds = 1V, I tried to vary channel length (L) to see Id progression. I was really surprised of results in weak inversion. For Vgs = 0.5V, Id decreases when L increases For Vgs = 0.4V, Id remains constant when L increases For Vgs = 0.3V, Id increases when
Thanks Lukas, helpful as usual I have found an explanation directly from the book from where the picture was taken, I will copy it here so it could be useful for someone else: "This figure can be misleading. It may appear that we can operate the MOSFET in accumulation if we need a good capacitor. Remembering that when the MOSFET is in accumulation
Hey all, I'm working on my thesis, an IC circuit for automotive applications. And I found one paper there Subthreshold condition are using for transistors. So, I am familiar with the theory about sub-threshold conduction or weak-inversion region, but I don't have any experience... Could you please answer for questions: What are drawb
I try to simulate derivative superposition cmos Lna in AWR circuit . But the results are very odd. I use 0.18um cmos. I biased cmos's in weak and strong inversion values.I showed my circuit and the graphs in these images. Please someone tell me whats wrong?
I have read BSIM manual for charge partition in channel. However I don't understand one thing; when using 0/100 charge partition scheme while all of inversion charge is accounted by source node, how is capacitance measured (since Cdb = dQd/dVb). Thanks.
Razavi book says: When inversion layer is being formed in a MOSFET, as the Vg becomes more positive, the holes will be repelled from the gate area leaving the negative ions behind and it forms a depletion region. When the negative ions are present in that region, why is it called depletion region ? If the negative ions are immobile because the Vg
Hello, as known two DSB transceivers (not SSB) cannot communicate between them but only with other SSB transceivers. What if I scramble (frequencies inversion) the transmitted audio in one of the two transceivers, and tune the other a bit out of frequency, so that the upper sideband of one is at the same side as the lower sideband of the other??
I am confused about what is the definition of Vdsat in weak inversion. As far as I know, Vds > Vdsat = Vgs - Vt and Vgs > Vt then the mos is in saturation. However, in weak inversion Vgs - Vt < -72mV, then Vdsat don't mean anything to me. Could you explain it?