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20 Threads found on Lambda Effect
The same effect (qualitatively) is called Early voltage by some when referrinf to MOSFETs, even though Mr. Early did his work on BJTs. Also referred to by its old-school LEVEL= models "lambda" param, which fitted the channel- shortening effects of Vds. The drain depletion region pushes laterally toward the source, shortening the channel (...)
Hello, I have a question about the simulation of large dielectric structures with FEKO, with particular reference to RADOME simulation. My objective is the evaluation of the effect of a large dielectric radome with a size of ~10 lambda on the pattern radiated by an antenna placed inside the radome structure. As a preliminary analysis, I have mode
Hi, Can I use lamda/12 length transmission line while designing matching circuits for high frequencies. When I calculate the length of transmission line using c/f I get 49mm. Can I use 5mm 0r 4mm transmission line. Regards, Praveen
Hello the channel length modulation or lambda has a huge effect on the analog circuit, therefor the analog circuit can not not apply the smallest channel length available by the modern technology . digital circuit in the othe rhand working in the linear and cutoff region that is not effected by lambda as I believe. so (...)
Vs will depend on what is attached to it. Is the source attached to a resistor? Is it attached to GND? Is it attached to a voltage source? Is it attached to a capacitor? Additionally, depending on what it's connected to, the answer may depend on threshold Vgs, carrier mobility, gate capacitance, MOSFET dimensions, lambda, and body effect... So, y
Hi all, i want to know how to extract Mosfet parameters e.g:(Vt,gamma,body effect coefficient,lambda...) "i know it may be a repeated thread but i already read the related threads and it cant help" so, i am using orcad capture cis & i am using MTP6N60 and i want to know from where to start .....
Does 5mm of RF track at gsm frequency ( around 900MHz), absolute need controlled impedance? As a rule of thumb, lines shorter than 1/20 wavelength have little effect, regardless of the line impedance. f=900MHz -> wavelength in air = 333mm If we assume FR4 and an effective permittivity of 4.5, the guided wavelen
the channel length modulation, which is valid also for long channels, is very relevant in short channel MOSTs. In the simple parabolic equation, the lambda coefficient is inversely proportional to L, so for very short transistors the drain current increment with Vds is decisively relevant. Body effect is not a phenomena involved only in short, but
Hi guys, I'm using HFSS to simulate an antenna, and I've run into an interesting problem. The antenna is surrounded by a standard airbox, lambda/8 at the longest wavelength away from the antenna, as recommended. I'm interested in simulating the effect of an infinite ground plane on the antenna, so I use a perfect E boundary on the bottom fac
How do I get the value of \lambda ( the channel length modulation parameter for MOSFETs), starting from a BSIM3 model? And what about N_A, N_D (acceptors and donors concentrations) and the \gamma coefficient for the body effect? Is there a web reference with all of the BSIM3 parameters described? Thank
lambda = 1/L * d(Xd)/d(VDS) so a bigger L => a smaller lambda, which means less channel length modulation effect. ro = 1/(lambda*ID) so a bigger L also means a bigger small signal output resistance. As far as matching goes, you want the transistor sizing to be as large as possible. Equation 13.62 in Razavi indicates: (...)
In the analog block, the large L can decrease the effect of lambda to current. It also can decrease mismatch of current mirro. In the degital block, since the mosfets are all switch, using minimum length to decrease die size.
usually i define the ICMR and the output output rail-to-rail voltages and use this specifications in helping me calculate my Vdsat/Vov. the hand calculation should give a close match to the simulator, recheck your calculations especially the lambda effect on L
It is called channel-length Modulatioon effect, dependented on L of device, and have a factor named lambda which having value of (0.005~0.03) in general.
1) how to determine the input impedance of CPW and slot antenna separately in CPW fed slot antenna structure 2) what should be the length of CPW, so that i should only get the impedance of slot in CPW fed slot antenna structure..... ?? Should it be be lambda/2, coz it will not effect the impedance of load ( slot antenna) ???
vt is a parameter of channel lenght in both pmos and nmos. this effect is called channel modulation effect considered with parameter lambda in the equation of cmos current equation. the best way to bypass this altering effect is to connect source to bulk of the mosfet. I think what you said should be body (...)
Long channels especially used in current mirrors to reduce lambda effect . As lambda inversely proportional to L .Large area less is the mismatch. Addressing skyismylimit question :I think Gate resistance would be the major factor considered while doing layout for large transistor .
According to the free space path loss formula: Ploss = 20*log((4*Pi*d)/lambda) where: d = distance in meters lambda = wavelength in meters Pi = 3.14 That means at 315 MHz the path loss at 100m is 62dB. Assuming a 0dBd antenna gain on both sides, and ignoring other loss factors and interferers, your link budget should be ok for a pro
Hello everyone, when assigning a PML on a DUT(the PML must be assigned on an AirBox which surrounds the DUT,with a thickness of lambda/4 at least!)a dialog window appear and a Minimum Radiating Distance is calculated. I don't known exactly the effect of the variation of this parameter. I see that if i use the default value (82mm for example) i ge
Hi , The electrical length ( teta) for a given physical length L of the microstrip is defined by. Therefore, teta = 90 when L = lambda.g / 4 (quarter-wavelength) , teta = 180 when L = lambda.g / 2 (half-wavelength) , teta = 360 But to have a line microstrip for a coupler rat-race, I must choose which value of teta . Thank you