Search Engine

236 Threads found on Linear Region
1-Those are semiconductor capacitors but I don't know what type they are.. 2-The MOS are not diode connected, they have been used instead of resistors ( may be voltage controlled, depends on Vint ) or they are simply Pull-Up resistors.Vgs=Vds so the MOS operates in linear region being as resistor
You'd still need a driver to excite the RC tank and once you have a driver it's best to use it to drive the actual gate directly. Assuming the mosfet is switching power, you want a strong driver to limit time in the linear region. Though there are plenty of applications that use basic oscillator circuits in power applications, there is few bene
Is the small signal model still valid?
I am told that power amplifier should be biased at saturation region. For the bipolar process, as shown in the figure, the saturation region( linear region) is at the left side, which is different from the saturation region of CMOS. 133664 So I need to bias the power amplifier to the B node, right? (...)
These differences pertain to mode of operation mostly. "On" resistance is resistance, desired to be low, from drain to source in the hard-gate-driven linear region. Of course a weakly driven FET has an on resistance too. Just lousy. "Output" resistance -is- "on" resistance, when the FET is "on". But it's more of interest (i.e. different interest)
133280 1)#1, which is an alway turned on transistor and that acts as a resistor? it's Not degeneration resistor. what is that for. If it's acting like a resistor then it much operating at linear region. 2)#2 why there's a cross coupled nand gates? 3)#3 Is that a cross coupled element used for as latch, for stoarge?
Yes, you can. Yes, people do. But there are a couple of things to watch out for. One is, the ramp time through the linear window of the front end (that is, in the second chart from ata_sa16, the region where the ouputs show any non-flat-line quality, plus some) must be much less than the delay time through the amplifier or you will pick up an er
Cascading NF specification of a system is valid only and only if the system is linear.( or the since the system is in linear region)Otherwise, non-linearity will bring more or less additional noise and this relation will not be valid anymore as in your system that includes a high nonlinear element frequency (...)
For a triangle waveform to produce the same result as a DC hysteresis sweep, the delay of the path in question must be << the ramp time -through the region of interest- (e.g. the linear window of an inverter chain). A 1uS total rise time and a 10nS prop delay will give you 1%-ish error if the whole range is linear, 10%-ish if only (say) (...)
So, do you agree that the PMOS connected its gate to ground is a linear device? do you agree that the PMOS connected its gate to CLK is a saturation device? No. PMOS w/ G=gnd! is linear provided that the drain is at some point above gnd!. At D=gnd! it is possibly still in saturation as |Vgs-VT| < |Vds|. Without def
I had some questions in LDO design when it comes to the error amplifier (EA) 1) Why is it advantageous to use OTAs when designing the error amplifier in LDOs? I know that we utilize OTA when we are driving small capacitive loads and voltage amplifiers when driving high impedance loads. Since the output of the EA is connected to the gate of the
A sequence $x$ is the output of a linear time-invariant system whose input is $s$. This system is described by the difference equation $(1.1)$ $$x=s-e^{-8\alpha}s$$ $$\alpha>0$$ a) Find the system function $$H(z)=X(z)/S(z)$$ and plot its poles and zeros in the z-plane. Indicate the region of convergenc
126451 The region where the Vout is some constant times the Vin is called the linear region and where the output saturates due to slew limits or the maximum deliverable output current limit is called the slew rate limited region.
... how can i expect rds for a specific vds , how LAMBDA influences for currents (becauseit varying very drastically with high curretns? Find here an Id vs. vds plot of a MOSFET: 125969 Here you can see rds vs. vds: in the linear region rds is essentially constant for
s-parameter is small small signal but provided you are operating in linear region, it should give you good estimate. since you have nothing other then s-parameter, its good to simulate it cos you have no other options available!
I still want to get a linear change in resistance even below the cutoff/threshold voltage (0.6-0.7 V), is there any mechanism or other circuitry which can be used to achieve this ? The resistive part of the Ids vs. Vds characteristic (called triode or linear region) has nothing to do with the MOS
Hi i know translinear principle is nothing but the relation of transconductance and the collector current and also MOSFET in the sub threshold region have a linear behaviour. So my doubt i am not able to find if a topology of transistors build is in the translinear closed loop. Will transistor only in closed loop form the (...)
The minimum CTR is the only parameter which we should consider for use in applications working saturated. Considering that manufacturers specify CTR within a wide range, a simulation would not give a reliable result for a linear region.
If operating as a switch, you go from saturation to cutoff (or other way round) as you mentioned. As Vbe increases, for a short amount of time, the transistor will be in active (linear) mode until you enter saturation. But you want to design such that it spends as little time as possible in the linear region.
The resistance variation for 1C increase in temperature is about 390 mΩ. for I mA current and accuracy about 0.1 C the voltage will be 39 ?V You need to calculate the bias current so that the curve fit within the less non-linear region of the sensor. Keep in mind that PT100 sensors are not totally linear