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110 Threads found on edaboard.com: Long Channel
More likely a regenerative (cross-coupled) gain stage, but if you want decent answers you could quit cropping your schematics to where they're not much more than a Rorschach test. A logic storage element would not use long channel devices.
With longer channel lengths you avoid the short channel effects (sic!) and achieve better matching (if necessary). If you need to keep the same W/L ratio, the consumed area rises with the square of L . And area costs money.
Run from process minimum to absurdly long, and look for where the (say) IDsat vs 1/L curve breaks away from linear (pick a tolerance).
I think this matches your requirement..DAC8760 But the problem is single channel..long back I have heard of part from TI of what you are looking right now.. Hope you can search further in TI to get exactly what you needed..
threshold voltage decreases as channel length decreases. For a long channel device, the depletion layer thickness at the source end of the channel and at the drain end of the channel are much less than the channel length L, and, thus, the depletion charge enclosed by these sections are much (...)
Hi.I am trying to design a long range remote control,I need an operating range of at least 500m.This remote control is using to operate a wild animal repellent and I want to turn ON and OFF the the device from my home.And the distance between home and field is around 550m,so the range is really important I have already tried different methods li
Is mSec actually are uSec? You are talking about very long delays!
Hi people, This is my first post here! :) I do simulations to understand behaviour of MOSFET as resistors. I am simulating a very long nmos transistor. My simulation setup is as follows: W/L=1u/100u Source is either 0V or 0.3V (To see effect of Vsb) Drain is varied from 0V up to 3.3V Gate is either 1.6 or 1.7V. Tech file is BSIM 0.35u
long channel device (like 10x10), pull an ID-VG curve, extract VT0 in the usual way, and back u0*Cox out of the equation you'd be looking to use it in (ID=w/l*u0*Cox*(V-VT)^2 or whatever).
In old CMOS processes, where the square law was a good approximation, vdsat should indeed be equal to vgs-vth when the transistor is in strong inversion and channel modulation can be ignored (long L). In your case the transistor is in moderate inversion as vgs is almost equal to vth. Try to make vgs a little higher and then re-check vdsat. In moder
Ask yourself what upside there is, in a long channel cascode device? The axiom is, if it doesn't buy you something, then stick with the minimum cost (area). You would generally prefer that the source of the cascode guard device move as little as possible, acting as a stiff source follower. That argues for minimum L, although the lambda / DIBL coul
In BSIM3 and BSIM4 models the only discontinuity exists between inversion regions so if OP of your transistor is quite deep in weak inversion You shouldn't see nothing "numerical". Remember that any drain current equations showed in books are only the first approximations based on number of assumptions/simplifications. And if You checked Gray's b
Let's start from "old" technologies (technology node ~0.25 um or older). According to a classical MOSFET theory, Vt of a long-channel device is independent of the channel/gate length. If channel length is decreased, depletion regions around source/body and drain/body p-n junctions start to overlap, and the barrier for (...)
Hello, What are the boundaries between so-called short and long codes in CDMA applications. I read that in WCDMA, a version of long codes called pseudonoise (PN) codes are used, what is the advantage of using them? Also, regarding the channel estimation, what kind of differences would it create whether we are using short or (...)
Very long MOS make poor capacitors because of the channel resistance. Better to make wide, up to the point that poly resistance becomes more than channel resistance, and use multiple fingers if you want more improvement. PDK limits of this sort are more likely to represent the limits of modeling effort, than any physical limit. Especially (...)
Much of the low-frequency (1/F) noise generated in MOSFET devices is inversely proportional to the gate area. Thus for a desired L/W ratio, a longer longer L means a longer W giving more gate area and lower noise. And generally you want low noise in analog circuits since it affects dynamic range, whereas that noise has little effect on (...)
If you are taking V, Itotal and Ifundamental as analog inputs, then you can easily apply those equations directly in mikroC. Its all straight forward. unsigned int V, Itotal, Ifund; unsigned long Swith_harmonic; double Iharmonic, Qharmonic, distAngle, TrueActPwr ; V = ADC_Read(channel_V); // channel_V is the analog (...)
Hi, I am working with BSIM4 parameter... Can anyone help me for the value of random on-die variation for nFET and pFET. Thresholds for nFET (for short channel) & pFET (for long channel) are 0.28V & 0.32V respectively. Thank you..
By 0.35um you should not be assuming a long channel simple MOS model anymore, and would be caring about the various mobilities and their fitting companions like velocity saturation, etc. Maybe you want to look for PDKs at some of the university sites (like cmosedu.com; there are others) that are good to go. kp/kn would be back-figured from the
Hello, Can current flow just as easily in either direction in a PFET, as long as the channel is enhanced? .......i realise that it can't in a PNP, but a PFET is different right?