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77 Threads found on edaboard.com: Mos And Bjt
Of course then you add the resistor mismatch term (hopefully better than mos; likely so if mos is small and resistor is not challenging lithography). Mismatch is driven down by more area (emitter for bjt; W*L for mos). In leading-edge minimum mos, random dopant (density) (...)
Hello, Has anyone used bjt available in TSMC65? There are pnp and npn transistors in the library and can be used. I wonder if any one has simulated Monte Carlo for those bjt. For mos, one should replace "_mac" transistor and add "stat_mis" library. How about bjt? there (...)
I suggest a simple solution... Use a mos transistor instead of a bipolar for switching applications.mos transistors have much less Rds resistance and drop-out voltage across D-S is much less than Bipolars.
There is always at least one lateral bjt in a Cmos device. There are even more in JI. But the qualities as an amplifying element are always deliberately degraded in order to make the mos behave more ideally. Body is base, gate is field plate, S/D are E/C. You would be well advised to pull your own data across the full temp (...)
In saturation mos has a "voltage drop" D-S that is greater than Vgs. This is certainly not the case. Perhaps you are confusing it with bjt saturation which is sort of the opposite. What you believe about mosFET on-resistance can easily be put false by realities of packaging and PCB design. 20mOhms pad-pad on the die (...)
IRF510 is a Power mosFet but BLW30 is a bjt.They are not direct replacements. Even if you re-design the bias circuit to get the right OP, mos and bjt chararactics are so different.Re-design your Power Amplifier with your new transistor is much easier. I'm sure there are app. notes for that frequency (...)
I am designing a class AB power amplifier and i need to use a 2N6757 N-channel mosFET & its complementary P-channel mos.I could've used a 2N3055 npn bjt & MJ2955 complementary pnp but i need faster switching speeds & hence need complementary p-channel mosFET. Thanks, rahdirs
BF862 is a JFET and is very good for your application. JFET's have much lower noise than any other transistor type (bjt, mos, GaAs) at low frequencies.
Hello, I need a good reference book on transistor-level analog design, describing circuits and principles of the essential building blocks (Current Sources, Mirrors, Differential Amplifiers, Cascode Amplifiers, Translinear Circuits, etc.) based on both bjt and mos techonologies. Please, point the title/author. Any (...)
A majority carrier diode (mos, Schottky) should have no recovery "porch", just the depletion capacitances to discharge. A bipolar diode (PN or bjt junction) will in reality; model quality is always a question and small signal transistors may simply assume no saturation and have no proper modeling depending on plans (...)
I don't think that your circuit design alternatives are clearly described. "Totem-pole" drivers are rarely used in mos circuit design, thus I'm not sure why you consider it all. It's a classical single polarity bjt topology, e.g. used in TTL logic.
hi , in ESD protection , i meet some trouble. i have a circuit consisted with bjts to limit the value of the supply voltage , but now i must use cmos technology to realize the same function of the voltage limiter in ESD protection . diode and resistor can be still used. what should i do ??82942
Let us consider CS and CE configuration. In CE configuration the dominant pole is in the input (where Miller effect plays a major role) but whereas in the CS configuration the dominant pole is at the output (this looks as if the Miller effect doesn't play any role at all). What's wrong with my understanding? I have another doubt too. Which has h
Is there any other methods of building a circuit without mos-tsr or tsr? plz..help me thank u
weak inversion region and subthreshold region are the same regions. If you look at the cross section of the layout of a simple mosfet(nmos and pmos) you can see a virtual bjt b/w Nmos and Pmos thru which a current flows: leakage current. (...)
in Vbe expression: Vbe=Vg0-(Vg0-Vbe0)*T/T0-(η-α)*VT*ln(T/T0) what is the meaning of η and α? and what is the exact value of η and α? η=4 is OK? and is η related to mos transistor or bjt transistor? thanks all.
Gate to Drain Voltage: Votage appearing between Gate and Drain Terminal of mos. Pretty Obvious? Not sure what are you asking here. To make it reverese bias: Never heard of this in case of mos, it does matter for bjt (base-collector), but not sure about mos.
The old blue Gray & Meyer has way more depth than I've needed. I just look at the pictures mostly :)
1. Definaitely not bjt. Modern processors use mos devices, either NMPS, Pmos or Cmos. 2. Intel invented the microprocessor so they had a head start in the market, they also produced other types of ICs (ROM, RAM etc) many used as support for their processors. AMD came into the market quite late and (...)
Yes, you will need a bjt or mos transistor to drive the motor