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The first solution should normally work but I guess the internal diode-if it really exist-of the MOS disturbs the operation.You'd better perhaps use "low power switching act MOS" instead ??
I asked the author of the paper and he mentioned that if you are biasing the transistor at high biasing current then you are automatically in class A operation region otherwise you can be in class AB, B or C. In 0.13um SiGe process the IHP has not specified the maximum current of transistor. They said for optimum
Class-E amplifiers are generally used for high efficiency, not only pulsed mode operation.But their design and implementation is quite difficult, needs quite deep RF design and optimization knowledge and technique.They are also quite dirty amplifiers in term of harmonic content.Class-E amplifier can also be used no doubt but (...)
Are there any more specifications? What is the minimum load value allowed on the output? Are you limited to one active device per stage? What is the maximum output swing expected? Maximum output distortion allowed? Frequency bandwidth of operation? - - - Updated - - - It would be much easier if
Hi, I am trying to understand about the Mosfet operation. It would be great if someone could help me get answers to these questions - 1. What happens to an AC signal (DC+ small AC signal) if it is applied to the gate of a MOS which is biased in Linear mode. In the saturation mode, the output at the drain/source can be found using the small si
Your opamp is very simple and is missing a voltage gain stage so its voltage gain will be low. Its supply voltage and operating current are extremely low. Its bandwidth and slew rate are very high for an opamp. The resistor values must be fairly low for operation at the VHF frequencies due to stray capacitance, but the resistor values must be very
Yes, and the Output can be Either Stepped UP or Down in Voltage. You could also have Multiple Output Windings. Your Biggest Problem is Making a SUITABLE Ferrite Core Transformer for the Frequency of operation. Typically it should be wound with LITZ Wire, to better handle the High Frequencies involved.
I think is not justified to design a high-efficiency Class-E power amplifier at +20dBm, because at this relative low output power the transistor cannot behave as a perfect switch, as the Class-E requires. Especially when use a transistor that was designed and manufactured as an LNA, which theoretically should work in pure Class-A operation.
BJT are fast if not driven into saturation. In addition MOSFET gate driver must provide low impedance push-pull operation, particularly fast gate discharge. That's impossible with your single transistor high side driver circuit. Just helpless.
Hi all, I have to design an opamp in 28 nm. So, I used Phillip Allen book as an example. However, then I was looking for Kn or Va - I found some posts (on this forum) like: don't carry about Kn, due to short channel effect - it's relevant. or Va (early voltage) is only for old technologies, not it isn't suitable for design. Sooo, what sh
I'm now make a board to produce a sub-nanosecond pulse using avalanche transistor. And I made it successfully. I'm quite sure that the waveform doesn't show avalanche breakdown. just linear amplifier operation.
but when input signal is 0V then output is 2.5V - it should be 0V. The requirement seems to contradict the previously specified +/-2.5 to 0..5V mapping. Would you mind to clarify the intended amplifier operation as an input/output voltage table. You want Vout = 0 for Vin = 0. What's the expected output for Vin = -2.5 and Vin =
ok, well here is the rendition of that diode that I have seen used, it means that the error amplifier output voltage doesn't have to transition so far in order to "brake" the smps at start yes it helps to reduce overshoot of vout at startup. -its ltspice simulation and pdf - - - Updated - - - I
In some respects your LC filter is like driving a woofer from a class D amplifier. Try the online calculators for this type of second order filter. Input your load impedance. For cutoff frequency choose 70-90 Hz, because if you choose 50 Hz it will attenuate your waveform and you don't want that. In other respects your operation is similar to a bu
1. I think you mix up the overdrive voltage Vod with the drain-source voltage Vds. The usual definition of Vod is Vgs = Vth + Vod (... where Vod would be negative for subthreshold operation), whereas in your definition the overdrive voltage of th
operation is not too different from a sine-PWM inverter. You start with a sawtooth wave at the input of an op amp. At the other input you apply audio. The modulating effect creates pulses of varying width. You need two PWM generators. One applies current through the load in one direction, one applies current in the other direction. This is a simp
A transistor in common-base operation can do the Bias adjustment is critical. Supply voltage must not change. With effort you can get near linear response. Output will be close to 0V when you input 0 mA signal.
I know for transformer coupled circuits when current becomes zero the back emf acts and the collector to emitter voltage is increased.But why does it becomes exactly 2Vcc.I am actually having trouble figuring out the value of back emf offered 119915
Your latest simulation show the amplifier in overload, input differential voltage is much to high, in so far the results are meaningless for regular operation. Please repeat with reasonable parameters, resulting in non-distorted output.
Set the inputs to A-B, this will get your 9 bits to work on the difference of the two signals. Not sure about. With most DSO that I know, A-B is a digital operation rather than utilizing an analog differential amplifier.