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Process Voltage Temperature

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82 Threads found on Process Voltage Temperature
Hi Guys, I have a concern on the bandgap design. I have covered the process/voltage/temperature + montecarlo simulations on both the pre layout and post layout simulations, and the result are in the expected range with typically ~1.2V of the bandgap output voltage. The montecarlo simulations were performed around 1000 (...)
I have designed too many op amps and none of them have any issue with a wide range variations of supply voltage , temperature , corners of process , worst case pvt circumstances , etc . but the problem is the monte carlo analysis by which my op amps are all totally devastated .I know the monte carlo analysis has quite a different scenario (...)
Can you tell us what the minimum guaranteed clock pulse width will be over all corners of process,voltage and temperature for any layout? If you cannot then you shouldn't try to build your own delay lines. John Eaton
how will i know which process corner is the best/worst case? we made a layout for a cmos inverter. the input is just a pulse and the output waves for the three corners are shown and their rise/fall times are measured and compared. based on the data, how will i describe the 3 corners and how will i know which corner is the best or the worst case?
I'm working on a circuit that has two subthreshold diode connected transistors. I believe these two devices have the most impact on the variation in the circuit (with a Monte Carlo Analysis). I think it would be due to the exponential dependence on threshold voltage in the subthreshold region. I've managed to reduce the effects of process variation
Hi can someone pls explain to me what is PVT analysis and how to do the analysis in cadence. I understand a circuit has to be tested under different conditions say if the voltage varies, and how stable it is in varying temperature and also the same functionality is met even it some changes occur during fabrication process and changes which (...)
We now have two problems that are related to temperature. Firstly, according to the BSIM4's model, we should have linear equation between threshold voltage and temperature, while when we simulate the NMOS, it shows totally linear, but in PMOS it shows some non-linearity. I wonder is this temperature non-linearity is (...)
From Tradeoffs and Optimization in Analog CMOS Design : Current biasing, typical for analog CMOS design, is used since it removes the bias current variations caused by threshold-voltage variation with device geometry, voltage bias (VSB and, for short-channel devices, VDS ), temperature, and process. Could you give an exa
hello all, what are the parameters needs to be consider while choosing a specific library file for any synthesis process? or what all conditions that can vary from library to library Thanx in advance dha_synth
If you mean the delay through the entire circuit (assuming combinatorial circuit), then no - those values are nothing to do with that - they are delay at the IO pads. You cannot calculate the delay through the entire circuit because it varies with PVT (process, voltage, temperature). 1. process - Each time you compile the (...)
What factors do min, typ and max values of a IOPATH delay depend on. What is it if only one operating condition is specified while generating SDF ? Is it the min max value that delay can take considering various load capacitance's and input slew values? Does it consider the effects of process variations as well ? Thanks in advance
DLL delay is independent of process, voltage, and temperature (PVT) variations.
Dear All, I have to do a PVT analysis of a circuit. I have a library file of TSMC that defines TT,SS,FF,SF,FS process corners. Now I simulate the circuit for all process corners. I simulate the circuit for differnt voltage(example TT_5V) and then for different temperature(example 27 degree celcius & 100 degree). But can (...)
Hi fenngou, Kdco although known, is not constant and varies quite a bit with process, voltage and temperature. By normalizing it, we make sure the variations do not impact the pll operation as long as we estimate its value correctly. Gain estimation is also straight forward because, unlike analog pll, OTW is digital and can be easily (...)
More easily, the frequency doubling can be achieved with a single XOR gate and a delay element. The latter is the problem, of course. You might use logic cell delay, involving the usual PVT (process, voltage, temperature) induced delay variations. Ultimately, a PLL is the way to generate multiplied frequencies with precise duty cycle.
Std. dev. is probably standard deviation. It's a term used in statistical analysis. Right. If mismatching is only due to process variation (not due to voltage, temperature, or layout asymmetry), a normal distribution of parameter
dear all I have designed a biasing reference current by adding PTAT and CTAT currents together. the result is a biasing current with small temperature coefficient. However, since both the PTA and CTAT has R in their equations, the total current still depending on the process variation. not like the bandgap reference voltage where no R (...)
Hi all I used to # for delay in rtl simulation, But that # is not work in synthesis. So how can i make delay time processing like as # in synthesis code?
I agree to your deducions from ohms law. Talking about channel resistance isn't quite correct, because the transistors won't necessarily operate in ohmic region. In addition, the output current will vary considerably according to process, voltage and temperature effects. I think that asymetric current mirrors would be better suited to (...)
I need to make a delay cell in standard CMOS technology. Typical delay is 10 nano seconds. Is there circuit that is accurate over process, voltage and temperature changes ? Can anyone mention names of technical documents for reading ? - Thanks in advance.