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114 Threads found on edaboard.com: Shoot
Flipping supply voltage and transistor polarity doesn't turn it into a working circuit. Looks like you have seen a principle schematic of a full bridge and thought it a real circuit. You need isolated or level shifting gate drivers for the high side. Also dead time generation to avoid bridge shoot-through.
Hello, I have fm receiver ic is Tea5591a it was working but after change to trimmer it is not working why??
That particular one just demonstrate negative skew to increase output swing. So you say, the describing text isn't related to the schematic. That's surprising. The schematic and waveforms seem to be flawed as well because the transistors are driven into shoot-trough. Where did you get it?
While driver designs try to minimize crossover / shoot-through current, these are never zero and there's a component from the predriver chain that just won't go away. So expect some internal CVf current (which ought to be rated, you'd think). Your MOSFET / IGBT Qgg should contain some Miller term which varies with working voltage. This may differ
Besides studying MOSFET SOA (safe operation area) you should also determine the expectable short circuit current and current rise time. shoot-through protection (protecting against instant short with "zero" rise time) is hard to achieve for low voltage FETs, you have a slightly better chance to turn of a high voltage FET before it's destroyed by th
Hello This sync Buck FET driver has extremely low dead time of 13ns between top fet driven off and bottom fet being driven on (and vice versa) . This is far too low. Do you know why it is so low? The simulator (LTspice) shows it giving serious shoot-thru current spikes of 100 Amps plus. LTC4449 (sync Buck FET driver)
You shoot N+ after poly is laid over active (thin ox) and the gate poly tends to be not-masked for this step, because you want the gate doped too. Your field ox and your poly both hard-mask the implant. The open active cut and the bare poly both receive the implant. This is the norm. N+ mask is grossly oversized and does not figure into the actual
Part of the problem is assigning what power belongs to the inverter, to the load and to the source. This wants to fit whatever power estimation tool inputs need to be. You have three terms as far as current - input charge (which includes Miller kickback), shoot-through charge in the supply-supply path, and load charge. If it were me I'd character
Hello, I've just discovered an interesting IC manufactured by Micrel. It's full-bridge Mosfet driver with some great features: adaptive dead time control and shoot-through protection. I really want to use it to drive my s
Hello, We are doing a Current mode, DCM Full Bridge SMPS, VIN=390VDC (PFC output) ; VOUT=400VDC max; Pout=100W max ; Application=100W LED lamp (V(LED) = 340-400VDC at 250mA); F(sw) = 100KHz Dimmable down to 10W. Mains isolation We have chosen to do the Full Bridge as a DCM Full Bridge. The reason for DCM is
Is that possible if I replace upper N-channel mosfet with P-channel mosfet. ...............Yes. But you will have to drive the bridge with non-overlap signals to avoid high current shoot-through from both MOSFETs on the same side being momentarily ON when the bridge changes states. That's why a dedicated b
Hello, We have simulated a 7kw Grid Tied Inverter with LTspice, as attached. Unfortunately we have shoot though current coming through the bridge FETs, due to the dead time given by the LTC4449 syncronous FET controller not being enough. Do you know of a different way of getting the PWM signals (they are the inverse of each other, but need t
Am MOSFET inverter (H-Bridge) is giving power loss of 4W even without a load. The details are given below: V = 12V F = 100KHz MOSFET Rds = 1mOhm The gate input to all the MOSFETS are absolutely clean with almost no overshoot, gate voltage is 10V. When I connected only the lower two MOSFETs, and gave the input signal, the current drawn by
Impedance control gives best control of ringing due to transient CISS during transition. THe ratio of source to switch to load impedance has a penalty of rising CISS with lower RdsOn. I prefer to choose a ratio of 50:1 max from driver to switch impedance. Then asymetry is another choice due to shoot thru, so lower impedance turn off and higher tu
yes, look for Logic Level Gate drive of similar RdsOn and choose a driver with <50x the same RdsOn output with a controllable dead-time to prevent shoot thru on change in direction of acceleration. and buy spares.
The measurement point is directly on the output pin of the driver with the ground as close to the driver as possible. The oscilloscope probe using a spring ground clip at the tip instead of a cable clip. The output of the driver is supposed to be a step between 0 and 12 volts. Distortion being overshoot and ringing. If the circuit was critically
while accessing the updated data from ds12887 i'm not getting the data from rtc.how can i trouble shoot this.i am using at89c51 and lcd to display.plz any one help me if they have asm code for the same.
Split the gate drive of the N and P legs of the final, and maybe their predrivers as well, and tailor the drives to get nonoverlap (or minimized-overlap) switching. I call it "ballistic anti-shoot-through" (as opposed to a feedback logic anti-overlap). You'll never be rid of crossover current entirely but you can eliminate 95% of it pretty simp
How do I prevent a shoot through in this circuit. I am not driving the inputs through a microcontroller, using ne555
Check for crossover time or deadtime under load start , stop or reverse, as it may get worse with shoot-thru spikes. Then ensure delays are used to ensure 1us deadtime approx. worst case.