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170 Threads found on Short Channel
With longer channel lengths you avoid the short channel effects (sic!) and achieve better matching (if necessary). If you need to keep the same W/L ratio, the consumed area rises with the square of L . And area costs money.
LTSpice may not be the best tool for this. If you want to do it like device engineers do it, you would set up to pull I(D) from two different points of Vgs, and do the math. Or you could put two FETs at two different voltages. Whether you prefer VTlin or VTsat is your call. VTlin eliminates some of the short channel's effects (lambda / Early vol
132916 the circuit is the equivalent circuit of the short channel effect of MOS how can i obtain the equivalent Rsx at VGS=1.8V and 0.6V by hspice simulation or hand count ? thanks..
if there anyone who knows that at what length the short channel effect will disappear
Expect to see a big initial change but run into plain oxide reliability - voltage asymptote before you get to 1um. 1um was 5V logic back in the day. Your short channel Vds is probably driven by other things but there's always that one not far behind it, all engineered and traded off.
Hi all, I have to design an opamp in 28 nm. So, I used Phillip Allen book as an example. However, then I was looking for Kn or Va - I found some posts (on this forum) like: don't carry about Kn, due to short channel effect - it's relevant. or Va (early voltage) is only for old technologies, not it isn't suitable for design. Sooo, what sh
threshold voltage decreases as channel length decreases. For a long channel device, the depletion layer thickness at the source end of the channel and at the drain end of the channel are much less than the channel length L, and, thus, the depletion charge enclosed by these sections are much smaller than the (...)
How to get dimension of mosfets in start up circuit? Also, I use equation I_REF=2*(1-1/√K)^2/(R^2 KP_n W_1/L_1 ) for getting value of resistor R=717 ohm. Iref=200uA, K=4, W/L=10/0.35, KP_n=170*10e-6. For that equation i got very bad caracteristic of current. The value of current is bigger. Maybe for short channel designe i mu
From Tradeoffs and Optimization in Analog CMOS Design : Current biasing, typical for analog CMOS design, is used since it removes the bias current variations caused by threshold-voltage variation with device geometry, voltage bias (VSB and, for short-channel devices, VDS ), temperature, and process. Could you give an exa
A short channel modern digital FET may leak nA, but almost any useful digital node will still provide you an I/O transistor pair with thicker gate ox, higher VT and lower leakage especially if you go longer than minimum L. A capacitor transimpedance amp, such as is used in some focal plane imager readouts, might be a good compact approach (smal
hi, all the three defines the channel length modulation (clm) . The parameter that defines clm depends on the device models of SPICE that you are using. 1st generation models - clm is defined by lambda 2nd generation - kappa 3rd generation - pclm. Higher level model defines the short channel effects accurately.
Simple current mirrors, especially at short channel length, are far from ideal and have a strong voltage dependence. Only when Vds(1)=Vds(2) can you expect such a mirror to produce Ids(1)=Ids(2) even with ideal matching. In your current-loaded inverter chain you can expect this to not often be the case unless it's held linear by feedback or you fo
Hi guys, In CMOS Circuit Design, Layout and Simulation by R.Jacob Baker page 300, Table 9.2 shows the parameters for short channel MOSFET. These are the parameters given: Id = 10uA Vgs = 0.350V Vth = 0.280V Cox = 25f F/um^2 W = 2.5um L = 100nm I'm trying to calculate back using Id equation and the parameters given to get the value W/L
Hi, I am trying to simulate a design using ELDO Simulation using the 50nm short channel Model file obtained from But i get the following Error: ERROR: This version of Eldo does not include SSIM models ! How to Overcome this? Thank You.
Hi, I am trying to use 50nm short channel model File for Simulating a design in ADK_DAIC tool from mentor using eldo simulator. I get the following error, "ERROR: This version of Eldo does not include SSIM models !" How to overcome this? The followinf is the model file im using: .model N_50n nmos level = 54 +binunit =
In today's short-length channel technologies (sub 22 nm), which effect is more important channel length modulation or velocity saturation? and, what is the most important effect of the secondary effects?
Hello, Classically a MOSFET is saturated when Vds > Vgs - Vth ... (Vgs - Vth = vov). However Ive recently started working on a more modern process where Vds_sat is used to indicate the onset of saturation and not Vov. However Vov and Vds_sat are not the same. Physically I understand that when Vds > Vov the channel is pinched off hence
Hi I want to design a short channel mosfet but i have an error in silvaco please help me i think the error is because of this line: "diffus time=10 temp=900 weto2 press=1.0" this the specification of my device: Total Oxide Thickness: 1.5 nm Oxide is composed of three layers: SiO2/HfO/SiON from the bulk to the gate contact Use poly fo
Hi Guys, I wanted to ask some views on my design or if you guys have any better suggestions. So I have 4 sensors with 4 outputs that I am giving to a Quad 1:2 demux. One Chanel is connecting the out to another Quad 4:1 mux and the other channel I need to short circuit. I am attaching a block diagram with this post. So the idea is that my
Hi, Thanks for reading this. Although reverse polarity protection is easily findable on searching the forum and on Google etc.. The specifics of my project makes it hard to apply most of the common results from such searches to what I want to do. In short, the circuit has a high power switching P-channel Mosfet directly between VCC, load and Gro

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