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54 Threads found on edaboard.com: Standard Vdd
Hello all, I want to know if it's normal for std cell libraries to have their std cells with non-tied bulk transistors. I'm using Nangate 45nm library and found that transistors in std cells GDS have floating bulks while their schematics have bulks correctly connected. So how Nangate give out a cell library with cells that is not correctly conne
Which metal layer is used for standard cell pins? Will all the pins be M1 or will it always be M2 or will it be a combination of M1 and M2 or can it be a higher metal layer like M3??
Most standard IC's are built with a process that generates a parasitic substrate diode. This diode is normally reverse biased with the proper polarity of the applied supply voltages. As noted, a reverse polarity supply will forward bias this diode, thus the current will be limited only by the power supply current limit and/or the resistance in the
I believe, the purpose of separate vdd and vddIO pins is explained in the datasheet. In a short, connecting both to a common 3V3 supply is the standard case and should work for your application.
It mainly depends on your application. If you are doing a standard cell layout that sits in another block, it is better to use lower metals and preserve higher metals for other blocks routing. If you are laying out a single block and are sure that there is no top metal blockage, then it is good to go for higher metals for lower resistance. A go
Hello In few standard cells, bulk of PMOS and NMOS are usually given a seperate bulk Voltages ,unlike the normal shorting of bulk to vdd and VSS in PMOS and NMOS respectively. Why is it done so? And would the Bulk voltages be higher or lesser than the supply voltages? Please share any docs related to the same concept. Thanks BB
Hi, standard cells from fab are having global vdd and gnd. I wan to convert it into local pin limited to same digital gate. Can Anybody let me know how to solve it ?
You need to check a design manual for this process. The nominal vdd for 180nm is 1.8V but for some I/O devices a standard is 2.5, 3.3 or 5V. This 2v or 3v could also means threshold voltages.
I am trying to run LVS using a design I created in Encounter but am receiving a number of errors. I have used the >saveNetlist -excludeLeafCells -includePowerGround command to create a netlist which includes vdd and VSS just like the layout. My standard cells also include VBP and VBN pins which are not connected in the netlist. When I go
Hi, after running RTL Compiler I get a verilog netlist without vdd! and vss! ports. I think the reason is the .lib library that does not provide them for the standard cells. (but they are declared in .lef). Im not sure if this is a problem or not... When running Encounter after init_design I do the following: (Power pins are initialized by "se
Hi all. I am trying to do LVS using std. cells from foundry. I am using Cadence tools with Calibre LVS. I am currently using an inverter (with input and output pins) as a test case. 1. Anyone know how to handle inherited gnd/vdd in layout? I see them in the schematic netlist, but I dont know how to include them in the layout. Are there any s
I have claculated the Dynamic Power for standard cell in ELC(Encounter Library Characterizer) using Formula : Rise Power = Integ (Ivdd - Ilkg) *V - CV^2 By Deducting switching power from rise power In Spectre i have used the command : export real name1 = integ (trim (sig=I(vdd), from=t1 to=t2) -(I_leakage)
hi, I am developing a standard cell characterization. Now I am doing for I O cell characterization. How to calculate leakage current while doing for pad simulation. Thank you
Hi, "GLOBAL" is used in the netlist because your standard cells has pins to both "vdd!" & "VSS!". The tool is just regarding "vdd!" & "vddD" as separate nets (similarly with your grounds). I believe the issue is due to the tool thinking you're shorting unrelated nets. Is it intentionally in your design to connect the (...)
... better not connect the drain of NMOS with vdd directly in NMOS source follower and not connect the drain of PMOS with GND in PMOS source follower. IMHO there's no reason to avoid such a connection, after all it's the standard connection for source followers. For complementary source followers, howe
See below the guaranteed values for the HCMOS family. The standard CMOS 40xx devices should behave similarly. 77937 With VIH ≧ 2/3 * vdd and VIL ≦ 1/3 * vdd you're usually on the safe side.
In a standard CMOS process, Vss-0.3V...vdd+0.3V.
Hello, I got a std cell lib from some company, and I am confused by my hspice simulation results. For example, I include the libs and try to simulate the Intrinsic delay of the cell, however, the results from the simulation are always smaller than the documentation. I am pretty sure that I set the right vdd and temp conditions, so what cou
Hi yes they are, net name gnd! and pin gnd!, same for the vdd! globalNetConnect performed. In addtion, I also get the following warning message with sroute: (sroute performed before placement) Begin power routing ... **WARN: (ENCSR-1253): Net vdd! does not have standard cells to be routed. Please check net li
Dear Neyolight, NExt time give the whole story from end to end of this clock. {including colpitts osc and PIC vdd} standard CMOS inverters make great small signal amplifiers 3 stages of x10 gain = 1000, while UB or unbuffered versions are only x10, so your small signal sine wave can be easily squared up with a couple passive parts and use