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Hi, All the informations can be easily found in the internet. Did you try an internet search on your own? You say "motor" and you say "output power" The output power of a motor is the mechanical power. P = M x 2 Pi x f Where "f" is the RPS ( revolutions per second). Power at the DC supply: P = V_avg x I_avg three phase motor input power: P =
There are quite a few free PCB design software tools available. Here are five of them. These are better suited to small, simple designs. For more complex designs, read our article on Which PCB Design Software is the Best. TinyCa
There are just three possible reasons: * The measurement of I is wrong * The measurement of V is wrong * or "R" is not a true ohmic "R". Maybe it is non linear, maybe it is complex... Looking at the waveforms, I'd guess that at least two of the three points apply. Respectively it's impossible to determine what's actually happenin
Why do you rarely get low voltage all-SMD sync buck schematics with say three SMD power FETs in parallel? Surely, paralleling SMD FETs here is the way forward as it allows the solution to avoid using a FET heatsink, which would significantly up the cost.
156268 From the Spec, we can see the VIH and VIL has the relation ship with VDD. My question is that VDD may be different in worst, best and typical case, such as 0.9V,0.7V and 0.8v. Is VIH or VIL different in these three case or just use the typical VDD 0.8v? Thanks
Hi, This is not a general I2C communication flow chart. It as a dedicated DS1307 I2C communication. Thus please refer to the DS1307 datasheet. There are three figures (4, 5 and 6). Please say which one you want to implement. Then compare them step by step with your flow chart. There are mistakes. But you did a good job. Drawing the flow chart i
As a simple example, a near ideal 0.5 lambda dipole, center freq. 900MHz, impedance 84+j30 Ohm, is tuned to cover 860-930MHz with lowest possible VSWR. Brown curve in Smith chart shows measured antenna impedance before tuning and yellow curve after tuning network have been applied. All are measured values, taking in account non ideal matching com
I have to agree with FvM. It does not make sense. Also, it is better to change the stackup to three copper layers, with the flex layer in the middle. This will make production much easier.
Simplistically, you can think of a diode being a series connection of three elements("resistors") - one resistor for depletion region, and two resistors for quasi-neutral regions (in n- and p-type doped semiconductor). Resistance in quasineutral region is much lower than the depletion region resistance at low applied voltages, that's why voltage d
In a three-terminal resistor element, the first and second terminals are connected to the resistor body, and conduct a DC current, while the third one is the "substrate" terminal, describing capacitive coupling between the resistor body and the well under the resistor. Conceptually, this third terminal is like a gate in a MOSFET, but in resistors,
If, and that is a big if, I am understanding you correctly: You require three clamp type probes, a single differential high voltage probe, and a 4 channel scope. Connect the high voltage probe to channel 1 and set the trigger to that channel. Clamp the current probes to each phase and feed them to channels 2,3 and 4. Make sure that all of the
Hello I want to know the difference of all three FVF in the attached diagram. The current source in Fig. a can be replaced by current mirror in Fig. C. This I can understand but what about Fig b. If the current source is is replaced by diode connected MOS. Is the diode connected MOS operated in triode region or saturation region? because mostly
If the frequency is fixed, and you are using logic levels which are precise, you can get 90 degrees shift with one resistor and one capacitor. Just use three inverters, one to invert your original clock to give 180 degrees output and the other two fed in series after the RC delay to give 90 degrees and 270 degrees. However, it will only work if th
It is a standard 18650 Lithium Ion battery. There are many chargers for it if you search with that number. There are three wires, one will be a common connection to the battery negative and a temperature sensor (probably the black wire), one will be the battery positive terminal (probably the red wire) and the other almost certainly goes to a therm
Hello, i'm trying to simulate a structure placed in a finite substrate in CADFEKO with 3 input ports and three output ports and placed edge ports in the desired positions. In order to do that i extended and bent the microstrip lines in these places to create the positive and negative faces needed to place the edge port. Next i placed a voltage sou
The rule of thumb that you ask for is that the ground plane on the same layer should be at a distance greater than 1.5 x width_of_the_line. For example if the width of the microstrip line is 1mm the distance to the nearby ground plane should be greater than 1.5mm, if you want that the microstrip line do not be affected by the g
Whoever designed that panel should be found accountable in case of fire caused by inadequate circuit breakers. 32A breakers are way to much for your wires that are connected to their outputs. I can't see the rating of the 3 phase breaker, but I guess that that one is also overrated. Lack of protective earthing is of a big concern, as well as l
I have used an SD card without any pull ups. But depending on the micro used this may cause extra current to be drawn when no SD card is present. If in single bit mode (SPI) the three unused SD card inputs should have pull up resistors, although I have found that they make no practical difference but may reduce current. Note that pull up resistors
I have a small board 30mm x 5mm. I am working on the documentation portion of the project. In Altium 18 I used the Place>Design View and changed the scale to 2:1. The size is great for a letter size print, but I cannot get the pads or solder mask to appear in the design view. I placed five Design Views in my document: Drill Drawing Layer, Top Coppe
Hi everyone, I want to share with you the 55-65 GHz low noise amplifier. The chip is a three-stage V-band Monolithic Low Noise Amplifier (MMIC) with good electrical performance. It is manufactured by standard CMOS process. The power consumption is as low as 15mW to obtain 20dB small signal gain and -8dBm output -1dB compression point.