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124 Threads found on Triode Region
I have this oscillator design and it says it operating at weak inversion region. How do you do that? I thought Vgs controls everything whether something in saturation, triode or weak inversion but the block diagram doesn't show Vgs how it could make the device in weak inversion region as opposed to other mode like saturation or
Hi, I am designing an 5-stage oscillator using Maneatis cells. Now, I do have a hard time knowing what things to do first. I designed the Maneatis delay cell but in order to keep the PMOS loads in triode region, I had to fix the value of (bp), which is actually (Vctrl) of the VCO, so that the loads operate in triode (...)
Hello, I am designing a Maneatis Delay Cell along with its replica biasing cell. I have a few questions regarding the replica cell: 1) Is it necessary for the transistors in the replica cell to work in the same region of operation as their replicas in the delay cell? I mean, does one pmos transistor has to work in triode and the other in satu
First, notice that the drains of M12 and M13 are tied together. Which means if the overdrive of both maintain the same total it's not going to change the total current flowing through them (ideally, not really). This means that the current flowing in total is independent of differential signal. When they both go up and down together (current pul
128051 Hello, It is the problem in the Razavi's book chapter 3, 3.19 (b). I think the M2 is in the triode region because M2 is in the saturation region when Vy-Vx>Vb1-Vx-Vth2, i.e., Vy>Vb1-Vth2. Razavi assumed that Vb1>Vb2>Vb3, so that Vb1-Vth2 is bigger than Vb3+Vth3, which means even if Vy is bigger than Vb3+Vth3 it
Hello. I just want to know whether we can refer bias voltage to mosfet operating in the triode region.. I've thought bias voltage means making mosfet operate in the saturation region. Thank you.
Interested also in having some clue to this question ! The only thing I know is that triode region has more dispersion than saturation region.
A mosfet can be used as a resistor only during the triode region of its operation. The necessary connections and the operating mechanism depends upon the mosfet being used. However, generally it is a common concept for an nmos, that to operate it in the triode region, you need to supply a voltage at drain with respect to the (...)
Hi i am reading a paper "+ 1V high frequency four quadrant current multiplier" It operates in triode region and i know the eqn for triode region is Id= K 125985 Mp and Mn are in triode and Mc is in saturation.. i am able to understand that Vds in the paper is (Vin +VDD) and Vt is Vtp. But for
In cadence DC analysis operating point there are two parameters ron and rout. I see that ron and rout are defined for all operating region (sub-threshold, triode, saturation). So, what are the definition or how these parameters are calculated in these regions? It makes sense to define ron in triode (...)
I still want to get a linear change in resistance even below the cutoff/threshold voltage (0.6-0.7 V), is there any mechanism or other circuitry which can be used to achieve this ? The resistive part of the Ids vs. Vds characteristic (called triode or linear region) has nothing to do with the MOS
Can you confirm that both nmos and pmos are being driven deep into triode/cutoff regions? And that their is no cross conduction?
Hi, region 1 is triode region 2 is saturation region 3 is subthreshold region another one region 0 it is for cutoff region 4 maybe breakdown region ( I am not sure about this)
I think if the output stage is ensured to remain in triode region throughout its operating range, then the distortion will be less. I'm sure you thought of saturation region ? ... if we drive the output stage into linear I think that the signal will be distorted at it'
With a simple PMOS/NMOS in triode region, the total current resp. its resistance is fixed, and you probably have to adjust or regulate it from the other side of supply. With the current mirror solution you have the possibility to control the total current through the differential pair without the necessity to control the load-side transistors. A
HI, I used the attached circuit to drive led about 10A. if mosfet operate in saturation region, the dissipation power of mosfet is large. so is it possible that mosfet operate in triode region in vccs. and what is differences between them, for example In triode region will cause the current stability (...)
Hello forum I am trying to switch mosfet. I am using 1 ohm resistor. My aim is heating or cooling resistor. First, ı tried basic common source configuration. I used 1 ohm resistor as a drain resistor. My gate voltage is either 3.3 v or 0 v. With this configuration, mosfet cant enter triode region. So how can ı swi
What is your headroom? The classic cascode needs Vmin=2?Vod+Vth. In addition using minimum L mosfets is bad idea due to channel modulation effects and higher threshold voltage for fets with Lmin. Check dc OPs, I bet that in cascode CM some of your transistors works in triode region.
Generally flicker noise tends to rise with Vov, see the following snippet. Hence triode region (large Vov, small Vds) will probably exhibit more flicker noise than saturation region. Still, operation in strong inversion mode (with large Vov and large Vds) would probably exhibit even more flicker noise in saturation region. (...)
How to represent mosfet in triode and sub threshold region. like self cascode transistor one transistor is in saturation and another once will be in the triode region . i want to calculate output resistance and effective trans-conductance of self cascode MOSFET. can any give the brief note about this topic. thank you