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71 Threads found on edaboard.com: Vds Ids
1) select a device according to operating frequency, gain, supply voltage, power and etc. 2) plot DC characteristics and determine DC operating by using Prms = vds x ids. Prms is RF output power. 3) do impedance matching for the PA using commercially available matching tools (e.g ADS and etc). make sure the matching network within the Qmax circle.
hi, Prms = vds x ids Prms = RMS RF output power.
Hi, with ADE, you can use the calculator (tools->calculator) and add Vgs-Vth as value to save. Then add gm = ids/vds, also with calculator. After somulation, in plot window, choose Y vs Y, that's it. No idea in command line, but feasible, because spice can do it. Regards
... It makes sense to define ron in triode region but I don't quite understand how should I understand ron in other regions. It's the same in saturation region: ron = δvdsids . Gives you a good feeling for the Early voltage, respectively for the output impedance e.g. of a current source|mirror.
I still want to get a linear change in resistance even below the cutoff/threshold voltage (0.6-0.7 V), is there any mechanism or other circuitry which can be used to achieve this ? The resistive part of the ids vs. vds characteristic (called triode or linear region) has nothing to do with the MOS
Simple current mirrors, especially at short channel length, are far from ideal and have a strong voltage dependence. Only when vds(1)=vds(2) can you expect such a mirror to produce ids(1)=ids(2) even with ideal matching. In your current-loaded inverter chain you can expect this to not often be the case unless it's held (...)
I used single pHEMT transistor to design my LNA, and set vds = 3 V,and ids = 60 mA. I have got the power consumption as Pdc = vds * ids = 3 V * 60 mA = 180 mW. I used the single supply voltage as Vdd = 3 Volts. I used the same three pHEMT transistors for design of my LNA. I set the each transistors biasing as (...)
Vgs is given being as 6 to 16 V.I think it's too much and there is a mistake in the datasheet vds vs. ids ( Vgs param.)curve.
Hello, Here is the weak inversion equation that I know: ids=2*n*u*Cox*Vthermal?*exp((Vgs-Vth)/(Vthermal*n)) Now, I've got a few questions about this: 1) How does the vds dependency of ids play in? On MIT open course, I've found the add-on (1-exp(-vds/Vthermal)) to be multiplied with the above equation. However, (...)
ids=Is\frac{W}{L}{e}^{\frac{Vgs}{Vt}}(1-{e}^{\frac{-vds}{Vt}}+\frac{vds}{Va}) Use this equation to estimate how threshold voltage varies with supply voltage.
Dear Sir, In the datasheet Igs absolute maximum can be upto 2mA. In my case I have got question is whether obtained Igs(1.82pA) correct or not. Also ids= 61.6mA , I have got it. As I told you I took transistor biasing as vds = 3v and ids =60mA. I want clarify the obtained values of ids, vds and Igs in
Sir, I have used the Avago ATF 54143 transistor to my work and connected the one transistor to other transistor in a feedback mode. How to set the biasing for the two transistors. Feedback transistors how much voltage differences of vds and Vgs we have to obtain, when we choose vds= 3V and ids=60mA.How much voltage differences we (...)
Hi AMSA84, In those operating point I can see the gds and the Ron. Which one is the correct one to characterize the Rds(on)? Ron is the write one if you want to measure the ON resistance of a MOS (switch characterization). Ron = vds / ids 1/gds is the small signal resistance. If you are interested in gain = gm * ro
Is there any n mosfet which can be full turn ON at Vgs =5v; ids =5 ampere or greater vds= 12v or greater
You get a non-linear relation vds=f(ids), you need to specify either vds or ids to calculate a small signal rds = dvds/dids or large signal Rds = vds/ids. In any case, they don't depend on gate resistor R.
Dear pujithakaza, There is no proper methodlogy for Microwave frequeny biasing ckt, you have randomely vary the resistors, will get the desired vds and ids. Because scatering parametes we don't have any method such that in the low frequency biasing circuits. Randomely you choose any biasing ckt such that voltage divider or self
Dear Sir, I designed the biasing for the low noise amplifier at vds=3v, ids=20mA, need to get the desired s- parameter as follows f(GHz) s11(dB) S21(dB) S12(dB) S22(dB) 1.3 -1.83312 17.944
A simple question , but what does the gradient ids vs vds represent? 84444 Coming back to the original question regarding the slope (gradient) of the ids-Vs graph: The slope of this curve dI/dV is identical to the dynamical output conductance of the device, which is rather small (equivalent to
Hello, I have an amplifier circuit in CMOS technology and I am doing a DC operating point analysis in Cadence. I know the usage of calculator tool to see the operating point parameters of the mosfets. However, I would like to see the (Vgs - Vth) , (vds - vdsat), ids, gm and gds displayed in a table for all mosfets in the amplifier. (...)
Apply 0.1V on the drain, ground the source and body. Sweep the gate from 0 to 1V in very small steps measuring the drain current. From the graph of Vgs vs ids, find the maximum slope (dids/dVgs) and draw a line to ids = 0 (intercept with Vgs axis). From this intercept value subtract 0.05V (0.5*vds) and this is the threshold (...)