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202 Threads found on Vth Vgs
why low vth device has higher noise than high vth device? Thanks.
Hi everyone, I have 32nm level 54 Nmos model. I want to simulate the change of threshold voltage accroding to channel length in LTspice but I do not know how. When I make dc op, it does not show vth directly. with linear extrapolation technique, vth can be found but it does not still show vth directly so how can I simulate (...)
If you review an analog IC design textbook (e.g. Razavi) you'll find criteria to determine the region when knowing Vds, vgs and vth. Usual SPICE simulators don't display the region (Some Cadence tools do, I believe), but could write measurement expressions that show it.
Hi guys, Allow me to ask you a question, since you are talking about Vdssat. In cadence, when you do annotate you get some of the mosfets parameters like vdsat, vds, vgs, vth, vbs, etc. Now, when you are designing a circuit we know that, depending if you are designing for strong inversion, moderate inversion or weak inversion, how do you guys int
IRF630 has vth of 2 to 4V and specified Rdson for 10V vgs. It can't be successfully operated with 5V or even 3.3V driver supply. Either choose a "logic-level" MOSFET or use high driver supply. IRF630 has 9.3A continuous Id rating, it can't work at 9A without a large heat sink. It's also 200V class, not suggested for a low voltage application. Yo
in a paper what is meant by sub-Vt saturation region ? i know it isn't the normal saturation region where VDS>vgs-vth. does the above expression mean its the maximum current that can be drawn in the sub-Vt domain ?
RdsOn applies when vgs >> vth Rout applies when vgs ~ vth and used for gain control or linear operation
Yes, vgs can be less than vth. Making them in the sub-threshold region has higher gm/id, more power efficiency and higher gm, which is good for noise minimizing and matching. If you want very high bandwidth, you need to make it in the saturation region, making vgs > vth.
High vth in power FETs means a high gate voltage swing means high switching losses. In IC technology, you have to position VT to best deal with the leakage power vs drive strength / speed "box". Here you often see multiple VTs in the same flow so that you can optimize near-static logic, and high speed clocked circuitry separately. An "easily in
Hello! Excuse my ignorance but I was reading about Photovoltaic Generators used as FET drivers, and the implication appears to be that operation only requires an initial pulse signal to drive a FET vth on, with the PVI driver having it's own floating voltage source to manage the FET vgs threshold. Is this correct? It's hard for me to wrap
Hi, with ADE, you can use the calculator (tools->calculator) and add vgs-vth as value to save. Then add gm = ids/vds, also with calculator. After somulation, in plot window, choose Y vs Y, that's it. No idea in command line, but feasible, because spice can do it. Regards
I have just come across the condition for MOS voltage controlled current source below and I am a bit confused. Could you explain why not Vds > vgs -
The shown equation is just a rather crude approximation. See here the context of Veff = vgs - vth and Vdsat vs. Inversion coefficient: 123383 ... derived from data from the book mentioned in the following diagram, which shows the relationship between Vdsat and drain current of a certain nMOS in all regions of its inver
123078 Lets say, a fully differential nmos-input telescopic amplifier, and I assume the supply is 3V, and the overdrive voltage of the M9, and M1, M3, M5, M7 is 0.5V, 0.2V,0.2V, 0.3V, 0.3V. that means the ouput swing is 1.5V for one side. and the threshold voltage for P/NMOS is 0.7V. I want to calculate the ICMR of the
Drain-bulk current should be sufficient to explain off-state current flow. Not off-state, saturation mode is meant: vgs > vth , and Vds > vgs - vth (pinch-off).
Hi all i am working on subthrshold region using pfet. I have done this before using nfet and using voltage source. I have good idea abt nfet where vgs < vth and VDS can be neglected no matter wat the value is if its above vth. But could anyone pls tell me how is it for pfet transistor. In nfet i used two voltage sources vgs (...)
In the linear region a rds can be descript by rds = 1/(mu Cox W/L (vgs-vth)). In a mos-cap VDS is equal to zero but what's the value for rds when vgs<vth oder vgs<0? In such cases you obviously can't use this equation. Instead use rds = VDS/(mu Cox W/L) = VDS/Id For VDS -> 0 --> rds -> ∞
I am not sure if I understand the question, but as I see it the transitor will be in linear/triode mode until vgs>vth and Vds<(vgs-vth). If this is true node B will more or less folow node A. BR Jerry
Actually, first one is a MOS transistor transconductance formula. And I think it is incorrect. it should be 2*Id/(vgs-vth) or sqrt (2*Un*Cox*Id). Second one is not gm of single transistor. This is probably effective gm of an amplifier and if Cc is compansation capacitor, it is probably a two stage miller opamp. In every situation, gm of a mos trans
You are generally limited by the gate-source threshold voltage (vgs(th)) so you want transistors that have a low threshold. I don't completely object to this but I don't completely agree either. Yes vth is important but in ideal case you'd be able to go beyond gate voltage by vth (assuming you don't care about accu