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18 Threads found on edaboard.com: Vth vth0

variation on chennel length in hspice models

Hi, I'm simulating variation on device parameters like vth, leff, tox with hspice. For variation on vth & tox, we must define variation on device parameters that are mentioned in the libraries, such as BSIM, including TOXP , vth0: .Global_Variation Parameter var=N() Y='180 + 8.02 * var' Z='17.5 + 0.37 * var' Nmos N1 + VT

[Moved]: Channel length modulation, Threshold voltage and Kn in TSMC 130nm

Depends on the models (which LEVEL or BSIM model) you have available. You should find these parameters in the model file(s): vth as vth0 Channel length modulation parameter as PCLM For Kn you need the low field channel carrier mobility U0 and Cox, which you can calculate from the SiO2 oxide thickness parameter TOX (or TOXP or TOXN).

problem in finding vth by vth0

The latest models for transistors includes more factors than vbs when calculating the vth of a device. As an example, W and L will affect vth to some extent. I would say that typically the value quoted for the vtho is for minimum length lmin and wide width (maybe >10*wmin) like you would implement in digital circuits. You can experiment with (...)

Parameters of NMOS and PMOS in 45 nm CMOS technology

The device parameters in the same technology node differ from foundry to foundry. If You have pure digital process, probably You have only low power devices with quite high threshold voltages ~0.5V. Analog/RF processes has transistors with various vth like zero (~50mV), low vth (~100mV), normal (~200mV) and low power with high vth. You need (...)

dual Vth power estimation problem

hi all i want to use dual vth technique to decrease the static power. i download 45nm transistor model from ptm. i using nangate 45nm sp model. i decreased th vth0 10 percent. should I change any thing else in transistor model file from ptm? help,tanx

VTH changes in DC from Hspice

Hello, everyone. I?d like to know the threshold of the MOS transistor. And I found the ?.print vth()? or ?.print lv9()? can give the threshold voltage. But 1) What does the output value of the .print lv9(Mxx) mean? Is it the same as the vth0 in the lib? 2) why does the threshold voltage changes in a .DC sweep? when VIN sweep from 0 to 1v, t

DIBL extraction in Hspice

I want to extract DIBL factor (delta) of an NMOS vth=vth0-(delta). Vds I am trying to run a DC analysis for Vgs from 0.1 to 0.2V and sweep Vds from 0.2 to 1V with 0.2V interval. And use .measure statement to find delta. I am trying the following in Hspice but not quite working .dc vgs 0.1 0.2 0.01 sweep vds 0.2 1.0 0.2 .plot DC i(m

calculating idsat from process model... not getting a reastic number

1. The problem statement, all variables and given/known data Here are the model parameters... vth0 (vth NMOS) = 0.7 to get everything even... U0 (NMOS un) = 533 cm^2 / V sec or 533000000 um^2 / V sec t0x = 1.41 * 10^-8 m or 0.0141 um eox = 3.97 * 8.85 aF/um or .000035.1345 uF / um Also... VDD = 5V W/L = 10/2 2. Relevant equations

How to find out the Vth or the operating region of a transistor

Hi, The best way to get exact vth value is finding it in model with "vth0" key word.

Question about the plot for gm/Id methodology

v*=vgs-vt, usually use v*=200mv for design. vthvth0 Just my points. Perhaps, I should repeat my question above more clearly. first, why the Vgs should be vt+200mV while ploting gm*ro versus vds? second, while sweeping vds, the actual threshold voltage would change as well, how should we define the value of "

Changing Vth of MOSFET in spice

Hi, Can someone tell me how to vary the threshold voltage of MOSFET in hspice. Is it enough if i give a value for vth0. I tried this M1 d g s s w=x l=y vth0=z But this kind of declaration is not changing the vth value.All this time i have been giving some substrate voltage and getting the required vth( body effect). (...)

How does Vth scale down with technology nodes

I think the vth should go down when scaling down to deeper sub-micron technology nodes for shorter channels and etc. but Predictive Technology Model (PTM) assumes in the contrary direction from 130nm to 22nm BSIM4 models, the vth0 parameter in model cards goes from 0.3782v up to 0.5118v. Can anyone explain

How to obtain the basic parameters of P/N mos for manual calculation?

You can find vth in the model. It is vth0. You can also find tox,u to calculate K. Maybe you can find lamda by simulatingI/V curve.

BSIM model parameter pvth0

hi pvth0 Cross-term dependence of vto Length and width product dependence of vth0 thnx

What is the value of Vth?

In spice model level=49,there is a param "vth0 " and what is the relationship between vth and vth0,can we calculate vth or do some simulation to get vth at different temp or with different W/L? Hi, vth0 is the threshold voltage at Vbs=0 for large L(10um at least). vth (...)

how to simulate the influence of VTH difference on the

maybe use mente-carlo with change the parameter vth0 in spice model.

How do we calculate Body Effect of Cmos

vth=vth0 + y {sqrt(|2PB|+Vsb) - sqrt(2PB) } vth0 = 2PB + 2PMS + Qdep/Cox y=sqrt(2*q*Esi*Na)/Cox where PB = Bulk potential PMS = W.F. difference b/w gate and sub

How to plot Vgs-Vt on the x-axis in Cadence?

Using calculator. U can calculate Vg-Vs, then click MP calculator button and select transistor on schematic window. After that choose vth0 model parameter and subtract that from Vg-Vs. You will get expression Vs-Vg-vth. Just plot it.