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18 Threads found on Vth vth0
Hi, I'm simulating variation on device parameters like vth, leff, tox with hspice. For variation on vth & tox, we must define variation on device parameters that are mentioned in the libraries, such as BSIM, including TOXP , vth0: .Global_Variation Parameter var=N() Y='180 + 8.02 * var' Z='17.5 + 0.37 * var' Nmos N1 + VT
Hi I am designing an analog level shifter in Cadence by TSMC 0.13um. But as we know, I need the parameters such as vth, Kn, Channel length modulation index and etc. I would be grateful if you could help me. thanks
in my hspice program all of Vbs in mosfet transistors are zero but in some mosfet transistors as seen in their operation points in file .lis vth is not equal to vth0 and has a value more than vth0. can anyone tell me why this happens?
The device parameters in the same technology node differ from foundry to foundry. If You have pure digital process, probably You have only low power devices with quite high threshold voltages ~0.5V. Analog/RF processes has transistors with various vth like zero (~50mV), low vth (~100mV), normal (~200mV) and low power with high vth. You need (...)
hi all i want to use dual vth technique to decrease the static power. i download 45nm transistor model from ptm. i using nangate 45nm sp model. i decreased th vth0 10 percent. should I change any thing else in transistor model file from ptm? help,tanx
Dear phuang With ".PROBE LV9(M1)", You could measure the current Threshold voltage which has been affected by Drain Induced Barrier Lowerin (DIBL) or Inverse Narrow Width Effect (INWE) or Body Biasing Effect and .... not the Constant Value of vth0. 2) Variation of Threshold voltage is mostly with DIBL effect. I think you can find out DIBL effect
I want to extract DIBL factor (delta) of an NMOS vth=vth0-(delta). Vds I am trying to run a DC analysis for Vgs from 0.1 to 0.2V and sweep Vds from 0.2 to 1V with 0.2V interval. And use .measure statement to find delta. I am trying the following in Hspice but not quite working .dc vgs 0.1 0.2 0.01 sweep vds 0.2 1.0 0.2 .plot DC i(m
1. The problem statement, all variables and given/known data Here are the model parameters... vth0 (vth NMOS) = 0.7 to get everything even... U0 (NMOS un) = 533 cm^2 / V sec or 533000000 um^2 / V sec t0x = 1.41 * 10^-8 m or 0.0141 um eox = 3.97 * 8.85 aF/um or .000035.1345 uF / um Also... VDD = 5V W/L = 10/2 2. Relevant equations
Hi, The best way to get exact vth value is finding it in model with "vth0" key word.
v*=vgs-vt, usually use v*=200mv for design. vthvth0 Just my points. Perhaps, I should repeat my question above more clearly. first, why the Vgs should be vt+200mV while ploting gm*ro versus vds? second, while sweeping vds, the actual threshold voltage would change as well, how should we define the value of "
Hi, Can someone tell me how to vary the threshold voltage of MOSFET in hspice. Is it enough if i give a value for vth0. I tried this M1 d g s s w=x l=y vth0=z But this kind of declaration is not changing the vth value.All this time i have been giving some substrate voltage and getting the required vth( body effect). (...)
I think the vth should go down when scaling down to deeper sub-micron technology nodes for shorter channels and etc. but Predictive Technology Model (PTM) assumes in the contrary direction from 130nm to 22nm BSIM4 models, the vth0 parameter in model cards goes from 0.3782v up to 0.5118v. Can anyone explain
You can find vth in the model. It is vth0. You can also find tox,u to calculate K. Maybe you can find lamda by simulatingI/V curve.
hi pvth0 Cross-term dependence of vto Length and width product dependence of vth0 thnx
In spice model level=49,there is a param "vth0 " and what is the relationship between vth and vth0,can we calculate vth or do some simulation to get vth at different temp or with different W/L? Hi, vth0 is the threshold voltage at Vbs=0 for large L(10um at least). vth (...)
maybe use mente-carlo with change the parameter vth0 in spice model.
vth=vth0 + y {sqrt(|2PB|+Vsb) - sqrt(2PB) } vth0 = 2PB + 2PMS + Qdep/Cox y=sqrt(2*q*Esi*Na)/Cox where PB = Bulk potential PMS = W.F. difference b/w gate and sub
Using calculator. U can calculate Vg-Vs, then click MP calculator button and select transistor on schematic window. After that choose vth0 model parameter and subtract that from Vg-Vs. You will get expression Vs-Vg-vth. Just plot it.

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