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Well Proximity

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26 Threads found on edaboard.com: Well Proximity
... or I should uncheck "WPE" in Calibre view? No, because Calibre tries to give you helpful info, however you - as the designer/user - needs to judge where this info is important. WPE is important for structures to be well matched, like, e.g., differential input transistors, current mirrors, any structure pairs/mult
Hello all. I am confused by one layout dependent affect. I know about: "Poly-to-Poly Spacing Effect" (=PSE), "Length of Diffusion" (LOD =STI ="Shallow Trench Isolation" effect) "well proximity Effect" (WPE). But what may bring into layout the minimum "channel - to - bulk_contact" spacing? (Please see attached picture)
Yes, on point 1. On a basic level the density checks are to ensure an even spread of metal and to ensure all required metal is formed correctly. On point 2, the need is also present for the base layers because these also have effect on device performance. Some effects can be - well proximity (distance to Nwell regions) - Length of (...)
Skin depth at 100 kHz is about 0.2 mm. You can derive a rule of thumb for wire gauge in stranded conductors. Secondly you have both skin and proximity effect. As a result, bundles of enamelled wire must be well stranded (also changing between inner and out layer in larger strands, like litz wire does) to achieve uniform current distribution.
1. Because of higher nwell doping near the nwell edges, s. the presentation I've linked to in this thread. 2. WPE is a process-conditioned effect and depends on the position of a MOSFET in relation (distance) to the well edge. Schematic symbols have no info about such position.
Implantati scattering and subsequent side diffusion during the well drive are statistical processes and some dopant tail may get to the P- where the NMOS lives, shifting its threshold (at least, in the regions near the Nwell). Some finite safe distance for a given max VT shift has to be declared.
ENDCAP are physical only cells and have n-well implants in it. ENDCAPs are used to avoid well proximity effect. As far as I know it doesn't have any metal and routing blockage over it.
The MOSFET for sure could be used to detect the water level. Here is one other solution - a simple capacitive sensor suitable for water level detection. It could be also used for proximity and touch detection. It uses 556 timer and is tested and works reliably well. Enjoy it.
If you are using a dual well process, then where there isn't Nwell (or Native) you will have Pwell implant. Near the edges of Pwell you will get wpe effects.
Hi, Can any one tell is IR will reflect for any object, because i am planning to use transmitter as well as receiver side by side. it should reflect to any object otherwise it wont recognize. please help me regarding this.
Common centroid layout techniques very often have to put up with current flow in opposite directions. I think this is only a problem from well proximity effects: 56018
hi all wpe occurs whenevr a pmos or nmos placed near n well only or is it occurs because of the guard rings pls give me a detailed explanation of wpe regards arun
WimRFP, There are some concepts of phisics not yet neither well known and explored by scientific comunity. The fact is that vacum energy extraction implies proximity of a star, where nuclear fusion generate magnetic dipoles that are the power supply of those aparatus. engineerpervez1, I buyed a book of this subject, but unnafortunnately,
Hi, Can any one tell me why, due to well proximity efffect, Vt of S-oriented device is more than that of D-oriented device? I reffered following paper. "Implications of proximity Effects for Analog Design" by P. G. Drennan, M. L. Kniffin, D. R. Locascio.
hi i m saurabh i need ur help for circuit as well as well as program for automatic door opening control by micro controller 89c 51. ok i want to operate one door by proximity sensor which actuate dc motor through 89c 51. the proximity sensor sense the man or object. and actuate the dc motor in forward direction then after (...)
what is well proximity...and how to overcome this.... See this paper: 140149
Hi I have been working in layout for a couple of years and I am familiar with a number of techniques for matching devices. As is commonly recomended I try and keep matching devices - Close to each other - Orientated in the same direction - Protected by dummy devices - Interdigitated / Cross quaded as required I have recently started i
Can any one explain about the well proximity effects, how and where these will occur and also its effect on device operation, how to prevent, layout techniques etc?
Hi , can anyone explain me about well proximity error and how to avoid the same? Thanks in advance. Regards, yaasi
check out those as well: - elektor RFID project: Elektor RFID Reader - | Electronics: Microcontrollers Embedded Audio Digital Analogue Test Measurement - TI IC's for